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MART65KP48AE3 PDF预览

MART65KP48AE3

更新时间： 2024-11-21 19:42:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 239K
描述
Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN

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MART65KP48AE3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-PALF-W2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.58
其他特性：HIGH RELIABILITY最小击穿电压：53.3 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：65000 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
极性：UNIDIRECTIONAL最大功率耗散：7 W
参考标准：MIL-19500最大重复峰值反向电压：48 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIALBase Number Matches：1

MART65KP48AE3 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
- Thru hole mounting  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 48 V to 75 V standoff voltages (VWM)  
65 kW Transient Voltage Suppressor  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MRT65KP48A thru MRT65KP75CA, e3  
FEATURES  
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.
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High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Suppresses transients up to 65 kW @ 6.4/69 µs  
Fast response with less than 5ns turn-on time  
Preferred 65kW TVS for aircraft power bus protection  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
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Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS Compliant devices available by adding “e3” suffix  
CASE 5A  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
Pin injection protection per RTCA/DO-160F up to Level 5 for Waveform 4 (6.4/69 µs) and up  
to Level 3 for Waveform 5A (40/120 s) at 70 oC  
Compatible with “abnormal surge voltage (dc)” in 16.6.2.4 (Category A, B, and Z) of  
RTCA/DO-160F  
.
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The MRT65KP48A is designed for Category A in protecting 80 V components**  
The MRT65KP54A or 60A is designed for Category B in protecting 90 V or 100 V  
components**  
.
The MRT65KP75A is designed for Category Z in protecting 125 V components**  
** including switching transistors, MOSFETS & IGBTs in offline switching power supplies  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 °C: 65 kW at @ 6.4/69 µs per waveform in Figure 8  
(derate per Figure 2) with impulse repetition rate (duty factor) of 0.01 % max  
Operating and Storage temperature: -55 °C to +150 °C  
.
.
.
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Steady-state power dissipation: 7 W @ TL = 25 °C  
Temperature coefficient of voltage: +0.100 %/°C max  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01015 Rev A, October 2010  
High Reliability Product Group  
Page 1 of 5  
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与MART65KP48AE3相关器件

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MART65KP48AE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Unidirectional, 1 Element, Silicon, RO
MART65KP48ATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Unidirectional, 1 Element, Silicon, PL
MART65KP48CA MICROSEMI

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 		Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MART65KP48CAE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MART65KP48CAE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MART65KP48CATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MART65KP54AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 65000W, 54V V(RWM), Unidirectional, 1 Element, Silicon, RO
MART65KP54AE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 65000W, 54V V(RWM), Unidirectional, 1 Element, Silicon, RO
MART65KP54ATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 65000W, 54V V(RWM), Unidirectional, 1 Element, Silicon, PL
MART65KP54CA MICROSEMI

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 		Trans Voltage Suppressor Diode, 65000W, 54V V(RWM), Bidirectional, 1 Element, Silicon, PLA

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