Datasheet > MAP6KE8.2CE3TR

MAP6KE8.2CE3TR

更新时间： 2024-11-24 07:20:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	240K
描述
Trans Voltage Suppressor Diode, 600W, 6.63V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

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MAP6KE8.2CE3TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.76	最大击穿电压：	9.02 V
最小击穿电压：	7.38 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
最大功率耗散：	5 W	认证状态：	Not Qualified
参考标准：	MIL-19500	最大重复峰值反向电压：	6.63 V
表面贴装：	NO	技术：	AVALANCHE
端子面层：	Matte Tin (Sn)	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MAP6KE8.2CE3TR 数据手册

P6KE6.8 thru 200CA, e3

600 Watt TRANSIENT VOLTAGE

SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This P6KE series is an economical 600 W Transient Voltage Suppressor (TVS)

for protecting voltage-sensitive components from destruction or degradation. It

is available in both unidirectional and bi-directional configurations as well as

RoHS Compliant (annealed matte-Tin finish) with an e3 suffix added to the part

number. The response time of their clamping action is virtually instantaneous.

As a result, they may also be used effectively for protection from ESD or EFT

per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments

and induced RF. They can also be used for protecting other sensitive

components from secondary lightning effects per IEC61000-4-5 and class

levels defined herein. Microsemi also offers numerous other TVS products to

meet higher and lower power demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

T-18

FEATURES

APPLICATIONS / BENEFITS

•

Available in both unidirectional and bidirectional

(add C or CA suffix to part number for bidirectional)

•

Selections for 6.8 to 200 volts breakdown (V_BR

Economical TVS series for thru-hole mounting

)

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_Z&

I_R(in the operating direction for unidirectional or both

directions for bidirectional)

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

•

Protection from switching transients & induced RF

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are available by

adding MQ, MX, or MV prefixes respectively to part

numbers.

Class 1: P6KE6.8 to P6KE130A or CA

Class 2: P6KE6.8 to P6KE68A or CA

Class 3: P6KE6.8 to P6KE36A or CA

Class 4: P6KE6.8 to P6KE18A or CA

Surface mount equivalents available as SMBJP6KE6.8

to SMBJP6KE200CA or SMBJ5.0 to SMBJ170CA

(consult factory for other surface mount options)

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

Class 1: P6KE6.8 to P6KE43A or CA

Class 2: P6KE6.8 to P6KE22A or CA

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

• Peak Pulse Power dissipation at 25^oC: 600 watts at

10/1000 μs (also see Fig 1,2, and 3).

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

• Impulse repetition rate (duty factor): 0.01%

•

FINISH: Tin-Lead or RoHS Compliant annealed

matte-Tin plating readily solderable per MIL-STD-

750, method 2026

• t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

• Operating and Storage temperature: -65^oC to +150^oC

•

MARKING: Body marked with part number

• Thermal Resistance: 25 ^oC/W at 3/8 inch (10 mm) lead

length from body, or 85°C/W junction to ambient when

mounted on FR4 PC board with 4 mm²copper pads (1

oz) and track width 1 mm, length 25 mm

POLARITY: Band denotes cathode. Bidirectional

not marked

•

WEIGHT: 0.7 grams (approximate)

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

• Steady-State Power: 5 watts @ T_L=25^oC 3/8 inch (10

mm) from body, or 1.47 W when mounted on FR4 PC

board described for thermal resistance

•

See package dimensions on last page

• Forward Voltage at 25^oC: 3.5 Volts maximum @ 100

Amp peak impulse of 8.3 ms half-sine wave

(unidirectional only)

• Solder temperatures: 260^oC for 10 s (maximum)

6-20-2007 REV G

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与MAP6KE8.2CE3TR相关器件

型号	品牌	获取价格	描述	数据表
MAP6KE8.2CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 6.63V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MAP6KE8.2E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, RO
MAP6KE8.2TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, PL
MAP6KE82	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 66.4V V(RWM), Unidirectional, 1 Element, Silicon, PL
MAP6KE82AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, RO
MAP6KE82ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, PL
MAP6KE82ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, RO
MAP6KE82CAE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MAP6KE82CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MAP6KE82CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, ROH

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