5秒后页面跳转
捷配首页

Datasheet > MAP6KE82CE3
MAP6KE82CE3 PDF预览

MAP6KE82CE3

更新时间： 2024-11-20 05:24:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 240K
描述
Trans Voltage Suppressor Diode, 600W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

阅读下载

中文翻译

获取价格

MAP6KE82CE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：O-PALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.75最大击穿电压：90.2 V
最小击穿电压：73.8 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
参考标准：MIL-19500最大重复峰值反向电压：66.4 V
表面贴装：NO技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MAP6KE82CE3 数据手册

 浏览型号MAP6KE82CE3的Datasheet PDF文件第2页浏览型号MAP6KE82CE3的Datasheet PDF文件第3页浏览型号MAP6KE82CE3的Datasheet PDF文件第4页 
P6KE6.8 thru 200CA, e3  
600 Watt TRANSIENT VOLTAGE  
SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This P6KE series is an economical 600 W Transient Voltage Suppressor (TVS)  
for protecting voltage-sensitive components from destruction or degradation. It  
is available in both unidirectional and bi-directional configurations as well as  
RoHS Compliant (annealed matte-Tin finish) with an e3 suffix added to the part  
number. The response time of their clamping action is virtually instantaneous.  
As a result, they may also be used effectively for protection from ESD or EFT  
per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments  
and induced RF. They can also be used for protecting other sensitive  
components from secondary lightning effects per IEC61000-4-5 and class  
levels defined herein. Microsemi also offers numerous other TVS products to  
meet higher and lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
T-18  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Available in both unidirectional and bidirectional  
(add C or CA suffix to part number for bidirectional)  
•
•
•
Selections for 6.8 to 200 volts breakdown (VBR  
Economical TVS series for thru-hole mounting  
)
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
as surge (3X) and 24 hours HTRB with post test VZ &  
IR (in the operating direction for unidirectional or both  
directions for bidirectional)  
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
•
•
Protection from switching transients & induced RF  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
•
•
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
•
•
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, and JANTXV are available by  
adding MQ, MX, or MV prefixes respectively to part  
numbers.  
Class 1: P6KE6.8 to P6KE130A or CA  
Class 2: P6KE6.8 to P6KE68A or CA  
Class 3: P6KE6.8 to P6KE36A or CA  
Class 4: P6KE6.8 to P6KE18A or CA  
Surface mount equivalents available as SMBJP6KE6.8  
to SMBJP6KE200CA or SMBJ5.0 to SMBJ170CA  
(consult factory for other surface mount options)  
Secondary lightning protection per IEC61000-4-5  
with 12 Ohms source impedance:  
•
•
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
Class 1: P6KE6.8 to P6KE43A or CA  
Class 2: P6KE6.8 to P6KE22A or CA  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
• Peak Pulse Power dissipation at 25oC: 600 watts at  
10/1000 μs (also see Fig 1,2, and 3).  
MECHANICAL AND PACKAGING  
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
• Impulse repetition rate (duty factor): 0.01%  
•
FINISH: Tin-Lead or RoHS Compliant annealed  
matte-Tin plating readily solderable per MIL-STD-  
750, method 2026  
• tclamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
• Operating and Storage temperature: -65oC to +150oC  
•
•
MARKING: Body marked with part number  
• Thermal Resistance: 25 oC/W at 3/8 inch (10 mm) lead  
length from body, or 85°C/W junction to ambient when  
mounted on FR4 PC board with 4 mm2 copper pads (1  
oz) and track width 1 mm, length 25 mm  
POLARITY: Band denotes cathode. Bidirectional  
not marked  
•
•
WEIGHT: 0.7 grams (approximate)  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
• Steady-State Power: 5 watts @ TL=25oC 3/8 inch (10  
mm) from body, or 1.47 W when mounted on FR4 PC  
board described for thermal resistance  
•
See package dimensions on last page  
• Forward Voltage at 25oC: 3.5 Volts maximum @ 100  
Amp peak impulse of 8.3 ms half-sine wave  
(unidirectional only)  
• Solder temperatures: 260oC for 10 s (maximum)  
Copyright © 2007  
6-20-2007 REV G  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

中文翻译

下载PDF

与MAP6KE82CE3相关器件

型号 品牌 获取价格 描述 数据表
MAP6KE82CE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MAP6KE82E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 66.4V V(RWM), Unidirectional, 1 Element, Silicon, RO
MAP6KE82E3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 66.4V V(RWM), Unidirectional, 1 Element, Silicon, RO
MAP6KE82TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 66.4V V(RWM), Unidirectional, 1 Element, Silicon, PL
MAP6KE9.1 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 7.37V V(RWM), Unidirectional, 1 Element, Silicon, PL
MAP6KE9.1AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 7.78V V(RWM), Unidirectional, 1 Element, Silicon, RO
MAP6KE9.1ATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 7.78V V(RWM), Unidirectional, 1 Element, Silicon, PL
MAP6KE9.1ATRE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 7.78V V(RWM), Unidirectional, 1 Element, Silicon, RO
MAP6KE9.1C MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 7.37V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MAP6KE9.1CA MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 7.78V V(RWM), Bidirectional, 1 Element, Silicon, PLA

与MAP6KE82CE3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证