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MALT062H PDF预览

MALT062H

更新时间: 2024-11-04 19:52:31
品牌 Logo 应用领域
松下 - PANASONIC 测试光电二极管
页数 文件大小 规格书
3页 480K
描述
Zener Diode, 6.2V V(Z), 6.45%, 0.15W, Silicon, Unidirectional, SC-81, 3 PIN

MALT062H 技术参数

生命周期:Obsolete零件包装代码:SC-81
包装说明:R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-F3
元件数量:2端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.15 W认证状态:Not Qualified
标称参考电压:6.2 V表面贴装:YES
技术:ZENER端子形式:FLAT
端子位置:DUAL最大电压容差:6.45%
工作测试电流:1 mABase Number Matches:1

MALT062H 数据手册

 浏览型号MALT062H的Datasheet PDF文件第2页浏览型号MALT062H的Datasheet PDF文件第3页 
Zener Diodes  
MALT062H  
Silicon planar type  
For ESD protection  
Unit: mm  
0.28±0.05  
Features  
+0.05  
0.12  
–0.02  
Electrostatic discharge ESD: ±30 kV  
Four elements anode-common type  
3
Absolute Maximum Ratings Ta = 25°C  
1
2
0.28±0.05  
(0.51)  
Parameter  
Symbol  
Rating  
150  
Unit  
mW  
°C  
(0.51)  
(0.80) (0.80)  
+0.05  
–0.03  
1
Total power dissipation *  
PD  
Tj  
0.60  
+0.05  
1.60  
–0.03  
3°  
Junction temperature  
Storage temperature  
150  
T
stg  
55 to +150  
°C  
2
Electrostatic discharge *  
ESD  
kV  
±30  
Note) 1: PD = 150 mW achieved with a printed circuit board.  
*
1: Cathode 1  
2: Cathode 2  
3: Anode 1, 2  
EIAJ: SC-81  
2: Test method: IEC61000-4-2  
*
(C = 150 pF, R = 330 , Contact discharge: 10 times)  
SSMini3-F2 Package  
Marking Symbol: 6.2E  
Internal Connection  
3
1
2
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Breakdown voltage *  
Symbol  
VBR  
IR  
Conditions  
Min  
Typ  
Max  
6.6  
Unit  
V
IR = 1 mA  
VR = 4.0 V  
5.8  
6.2  
Reverse current  
1.0  
µA  
pF  
Terminal capacitance  
Ct  
VR = 0 V, f = 1 MHz  
55  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. The temperature must be controlled 25°C for VBR mesurement.  
VBR value measured at other temperature must be adjusted to VBR (25°C)  
3. : VBR guaranted 20 ms after current flow.  
*
Publication date: September 2005  
SKE00028AED  
1

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