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MADP-0XX025-1314 PDF预览

MADP-0XX025-1314

更新时间: 2024-11-20 12:56:31
品牌 Logo 应用领域
泰科 - TE 二极管
页数 文件大小 规格书
4页 167K
描述
SURMOUNT™ 25μM PIN Diodes

MADP-0XX025-1314 数据手册

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MADP-017025-1314  
MADP-030025-1314  
SURMOUNT™ 25µM PIN Diodes  
RoHS Compliant  
Rev. V5  
Case Style ODS 1314  
Features  
0603 Outline  
Surface Mount  
25µm I-Region Length Devices  
No Wirebonds Required  
Silicon Nitride Passivation  
Polymer Scratch Protection  
Low Parasitic Capacitance and Inductance  
High Average and Peak Power Handling  
Description  
This device is a silicon, glass PIN diode surmount chip  
fabricated with M/A-COM’s patented HMICTM process.  
This device features two silicon pedestals embedded in a  
low loss, low dispersion glass. The diode is formed on the  
top of one pedestal and connections to the backside of the  
device are facilitated by making the pedestal sidewalls  
electrically conductive. Selective backside metallization is  
applied producing a surface mount device. This vertical  
topology provides for exceptional heat transfer. The  
topside is fully encapsulated with silicon nitride and has an  
additional polymer layer for scratch and impact protection.  
These protective coatings prevent damage to the junction  
and the anode air-bridge during handling and assembly.  
Applications  
These packageless devices are suitable for usage in  
moderate incident power, 50dBm/C.W. or where the peak  
power is 75dBm, pulse width is 1µS, and duty cycle is  
0.01%. Their low parasitic inductance, 0.4 nH, and  
excellent RC constant, make these devices a superior  
choice for higher frequency switch elements when  
compared to their plastic package counterparts.  
Chip Dimensions  
DIM  
INCHES  
MM  
Min  
Max  
Min  
Max  
A
B
C
D
E
F
0.060  
0.031  
0.004  
0.019  
0.019  
0.019  
0.029  
0.062  
0.032  
0.008  
0.021  
0.021  
0.021  
0.031  
1.525  
0.775  
0.102  
0.475  
0.475  
0.475  
0.725  
1.575  
0.825  
0.203  
0.525  
0.525  
0.525  
0.775  
Absolute Maximum Ratings1 @ TA = +25°C  
(unless otherwise specified)  
Parameter  
Forward Current  
Absolute Maximum  
500 mA  
Reverse Voltage  
- 135 V  
Operating Temperature  
Storage Temperature  
Junction Temperature  
-55°C to +125°C  
-55 °C to +150°C  
+175°C  
G
+44dBm MADP-017025  
+47dBM MADP-030025  
Notes:  
C.W. Incident Power  
1) Backside metal: 0.1microns thick.  
2) Yellow area with hatch lines indicate backside ohmic gold  
contacts.  
Peak Incident Power (dBm) +50 dBm, 10µS, 1% duty  
Mounting Temperature +280°C for 30 seconds  
3) Both devices have same outline dimensions ( A to G).  
1) Exceeding these limits may cause permanent damage  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.4155721  
China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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