Datasheet > MAC6401M

MAC6401M

更新时间： 2024-11-30 01:15:03

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
2页	269K
描述
BIDIRECTIONAL TRIODE THYRISTORS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MAC6401M 数据手册

D I G I T R O N S E M I C O N D U C T O R S

MAC6401 SERIES

BIDIRECTIONAL TRIODE THYRISTORS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Repetitive peak off-stage voltage, gate open

(T_J= -65 to +100°C)

MAC6401B

200

400

600

800

V_DRM

Volts

MAC6401D

MAC6401M

MAC6401N

RMS on-state current (conduction angle = 360°, T_C≤ 65°C)

Peak non-repetitive surge current (One Cycle, 60Hz)

I_T(RMS)

I_TSM

Amps

300

Circuit fusing considerations

I²t

A²s

(T_J= -65 to +100°C, t = 1.25 to 10ms)

450

Peak gate power (pulse width = 1.0µs)

Average gate power

P_GM

P_G(AV)

I_GM

0.75

Watts

Amps

°C

Peak gate current (pulse width ≤ 1.0µs)

Operating junction temperature range

Storage temperature range

Stud torque

T_J

-65 to +100

-65 to +150

T_stg

°C

In. lb.

THERMAL CHARACTERISTICS

Characteristics

Symbol

R^Ө

Max

Unit

Thermal resistance, junction to case

0.9

°C/W

ELECTRICAL CHARACTERISTICS

(T_C= 25°C unless otherwise noted, either polarity of MT2 to MT1, unless otherwise noted)

Characteristic

Symbol

I_DRM

Min

Typ

Max

Unit

Peak off state current

(V_D= V_DRM, gate open, T_J= 100°C

Peak on-state voltage (either direction)

V_TM

Volts

(I_TM= 100A peak)

2.1

2.5

DC gate trigger current (continuous dc)

(V_D= 12V, R_L= 30Ω)

I_GT

MT2(+), G(+); MT2(-), G(-)

MT2(+), G(-); MT2(-), G(+)

DC gate trigger voltage (continuous dc), all trigger modes

(V_D= 12V, R_L= 30Ω)

V_GT

1.35

2.5

Volts

(V_D= Rated V_DRM, R_L= 125Ω, T_C= 100°C)

0.2

Holding current

I_H

µs

(V_D= 12V, gate open, I_T= 150mA)

Gate controlled turn on time

t_gt

(V_D= Rated V_DRM, I_TM= 45A, I_GT= 200mA, rise time = 0.1µs)

1.7

Critical rate of rise of commutating voltage

(commutating di/dt = 16A/ms, gate unenergized, V_D= Rated V_DRM, I_T(RMS)= 30A,

T_C= rated value from figure 1)

dv/dt(c)

dv/dt

V/µs

Critical rate of rise of off-state voltage

(V_D= Rated V_DRM, gate open, exponential waveform, T_C= 100°C)

MAC6401B

MAC6401D

MAC6401M

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130205

中文翻译

下载PDF

与MAC6401M相关器件

型号	品牌	获取价格	描述	数据表
MAC6401N	DIGITRON	获取价格	Triac; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 300; Max DC
MAC7100	MOTOROLA	获取价格	MAC7100 Microcontroller Family Hardware Specifications
MAC7100	FREESCALE	获取价格	Microcontroller Family Hardware Specifications
MAC7100_04	FREESCALE	获取价格	Microcontroller Family Reference Manual
MAC7100_0410	FREESCALE	获取价格	Microcontroller Family Reference Manual
MAC7100CFU	MOTOROLA	获取价格	MAC7100 Microcontroller Family Hardware Specifications
MAC7100CPV	MOTOROLA	获取价格	MAC7100 Microcontroller Family Hardware Specifications
MAC7100CVF	MOTOROLA	获取价格	MAC7100 Microcontroller Family Hardware Specifications
MAC7100D	MOTOROLA	获取价格	MAC7100 Microcontroller Family Hardware Specifications
MAC7100EC	MOTOROLA	获取价格	MAC7100 Microcontroller Family Hardware Specifications

与MAC6401M相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

MAC6401M

MAC6401M 数据手册

与MAC6401M相关器件

与MAC6401M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MAC6401M

MAC6401M 数据手册

与MAC6401M相关器件

与MAC6401M相关文章

您还可以找

您在本页遇到什么问题？