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MAC310-8 PDF预览

MAC310-8

更新时间: 2024-11-12 02:54:47
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2页 143K
描述
SILICON BIDIRECTIONAL THYRISTORS

MAC310-8 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.8
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:TIN LEAD处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:TRIACBase Number Matches:1

MAC310-8 数据手册

 浏览型号MAC310-8的Datasheet PDF文件第2页 
D I G I T R O N S E M I C O N D U C T O R S  
MAC310(A) SERIES  
SILICON BIDIRECTIONAL THYRISTORS  
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)  
Rating  
Symbol  
Value  
Unit  
Peak repetitive off-state voltage(1)  
(TJ = -40 to +110°C, ½ sine wave, 50 to 60Hz, gate open)  
MAC310-4, MAC310A-4  
VDRM  
200  
400  
600  
Volts  
MAC310-6, MAC310A-6  
MAC310-8, MAC310A-8  
RMS on-state current (Full cycle sine wave, 50 to 60Hz, TC = 80°C)  
IT(RMS)  
ITSM  
10  
Amps  
Amps  
Peak non-repetitive surge current  
(1 cycle, 60Hz, TJ = 110°C)  
100  
Circuit fusing considerations (t = 8.3ms)  
Peak gate current (t 2µs)  
I2t  
IGM  
40  
A2s  
Amps  
Volts  
Watts  
Watts  
°C  
±2  
Peak gate voltage (t 2µs)  
VGM  
PGM  
PG(AV)  
TJ  
±10  
Peak gate power (t 2µs)  
20  
0.5  
Average gate power (TC = 80°C, t 8.3ms)  
Operating junction temperature range  
Storage temperature range  
-40 to +110  
-40 to +150  
8
Tstg  
°C  
Mounting torque  
In. lb.  
Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are  
exceeded.  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal resistance, junction to case  
Thermal resistance, junction to ambient  
Symbol  
RӨJC  
Maximum  
Unit  
°C/W  
°C/W  
2.2  
60  
RӨJA  
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ.  
Max  
Unit  
Peak blocking current  
(VD = Rated VDRM, gate open, TJ = 25°C)  
(VD = Rated VDRM, gate open, TJ = 110°C)  
IDRM  
-
-
-
-
10  
2
mA  
mA  
Peak on-state voltage  
VTM  
Volts  
(ITM = 14A peak, pulse width 2ms, duty cycle 2%.)  
-
-
2.0  
Gate trigger current (continuous dc)  
(VD = 12V, RL = 100)  
IGT  
mA  
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)  
MT2(-),G(+) “A” suffix only  
-
-
-
-
5
10  
Gate trigger voltage (continuous dc)  
(VD = 12V, RL = 100)  
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)  
MT2(-),G(+) “A” suffix only  
-
-
-
-
2.0  
2.5  
Volts  
VGT  
(VD = Rated VDRM, RL = 10k, TC = 110°C)  
All Types  
0.2  
-
-
-
15  
-
Holding current  
IH  
tgt  
mA  
µs  
(VD = 12V, ITM = 200mA, gate open)  
-
-
-
Gate controlled turn-on time  
(VD = Rated VDRM, ITM = 14A, IG = 30mA)  
1.5  
25  
Critical rate of rise of off-state voltage  
dv/dt  
V/µs  
(VD = Rated VDRM, exponential waveform, TC = 110°C)  
-
phone +1.908.245-7200  
fax +1.908.245-0555  
sales@digitroncorp.com  
www.digitroncorp.com  
144 Market Street  
Kenilworth NJ 07033 USA  
Rev. 20130213  

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