MAC210-8FP

更新时间： 2024-11-05 22:38:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		可控硅三端双向交流开关
页数	文件大小	规格书
6页	114K
描述
ISOLATED TRIACs THYRISTORS 10 AMPERES RMS 200 thru 800 VOLTS

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MAC210-8FP 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Silicon Bidirectional Thyristors

ISOLATED TRIACs

. . . designed primarily for full-wave ac control applications, such as light dimmers,

motor controls, heating controls and power supplies; or wherever full-wave silicon

gate controlled solid-state devices are needed. Triac type thyristors switch from a

blocking to a conducting state for either polarity of applied anode voltage with positive

or negative gate triggering.

THYRISTORS

10 AMPERES RMS

200 thru 800 VOLTS

•

Blocking Voltage to 800 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

•

Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

Gate Triggering Guaranteed in Three Modes (MAC210FP Series)

or Four Modes (MAC210AFP Series)

MT2

MT1

CASE 221C-02

STYLE 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Repetitive Peak Off-State Voltage (T = –40 to +125°C)

DRM

Volts

1/2 Sine Wave 50 to 60 Hz, Gate Open

MAC210-4FP, MAC210A4FP

MAC210-6FP, MAC210A6FP

MAC210-8FP, MAC210A8FP

MAC210-10FP, MAC210A10FP

200

400

600

800

(2)

On-State RMS Current (T = +70°C) Full Cycle Sine Wave 50 to 60 Hz

Amps

T(RMS)

Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = +70°C)

100

TSM

preceded and followed by rated current

Circuit Fusing (t = 8.3 ms)

I t

A s

Peak Gate Power (T = +70°C, Pulse Width = 10 µs)

Watts

Watt

Amps

Volts

°C

Average Gate Power (T = +70°C, t = 8.3 ms)

0.35

G(AV)

Peak Gate Current (T = +70°C, Pulse Width = 10 µs)

RMS Isolation Voltage (T = 25°C, Relative Humidity

20%)

1500

(ISO)

Operating Junction Temperature

Storage Temperature Range

–40 to +125

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

2.2

Unit

°C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Case to Sink

Thermal Resistance, Junction to Ambient

θJC

2.2 (typ)

θCS

θJA

1. V

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

DRM

voltage ratings of the devices are exceeded.

2.ThecasetemperaturereferencepointforallT measurementsisapointonthecenterleadofthepackageascloseaspossibletotheplasticbody.

Motorola Thyristor Device Data

Motorola, Inc. 1995

12 3 4 5 6

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与MAC210-8FP相关器件

型号	品牌	获取价格	描述	数据表
MAC210-8-L	MOTOROLA	获取价格	600V, 10A, TRIAC, TO-220AB
MAC210-8-N	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 10A I(T)RMS, TO-220AB,
MAC210-8-S	MOTOROLA	获取价格	600V, 10A, TRIAC, TO-220AB
MAC210-8-U	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 10A I(T)RMS, TO-220AB,
MAC210-8-U2	MOTOROLA	获取价格	600V, 10A, TRIAC, TO-220, 2 PIN
MAC210-8-UA	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 10A I(T)RMS, TO-220AB,
MAC210-8-W	MOTOROLA	获取价格	TRIAC, 600V V(DRM), 10A I(T)RMS, TO-220AB,
MAC210-9	DIGITRON	获取价格	SILICON BIDIRECTIONAL THYRISTORS
MAC210A10	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
MAC210A10	MOTOROLA	获取价格	TRIACs 10 AMPERES RMS 200 thru 800 VOLTS

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