SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
10 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC210 Series) or Four Modes
(MAC210A Series)
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Repetitive Peak Off-State Voltage
V
DRM
Volts
(T = –40 to +125°C,
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC210-4, MAC210A4
MAC210-6, MAC210A6
MAC210-8, MAC210A8
MAC210-10, MAC210A10
200
400
600
800
On-State Current RMS (T = +70°C)
Full Cycle Sine Wave 50 to 60 Hz
I
10
Amps
Amps
C
T(RMS)
Peak Non-repetitive Surge Current
I
100
TSM
(One Full Cycle, 60 Hz, T = +70°C)
C
Preceded and followed by Rated Current
2
2
Circuit Fusing Considerations
(t = 8.3 ms)
I t
40
20
A s
Peak Gate Power
(T = +70°C, Pulse Width = 10 µs)
C
P
Watts
GM
Average Gate Power (T = +70°C, t = 8.3 ms)
P
0.35
2
Watt
C
G(AV)
Peak Gate Current
(T = +70°C, Pulse Width = 10 µs)
C
I
Amps
GM
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to +125
–40 to +125
°C
°C
J
T
stg
(1)
V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that
DRM
the voltage ratings of the devices are exceeded.
3–75
Motorola Thyristor Device Data