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MAC15_08 PDF预览

MAC15_08

更新时间: 2024-02-16 18:32:51
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安森美 - ONSEMI /
页数 文件大小 规格书
6页 110K
描述
Triacs Silicon Bidirectional Thyristors

MAC15_08 数据手册

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MAC15 Series  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
solidstate relays, motor controls, heating controls and power  
supplies; or wherever fullwave silicon gate controlled solidstate  
devices are needed. Triac type thyristors switch from a blocking to a  
conducting state for either polarity of applied main terminal voltage  
with positive or negative gate triggering.  
http://onsemi.com  
TRIACS  
15 AMPERES RMS  
400 thru 800 VOLTS  
Features  
Blocking Voltage to 800 V  
All Diffused and Glass Passivated Junctions for Greater Parameter  
Uniformity and Stability  
MT2  
MT1  
Small, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or  
Four Modes (MAC15A Series)  
G
MARKING  
DIAGRAM  
PbFree Packages are Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
4
Rating  
Symbol  
Value  
Unit  
TO220AB  
CASE 221A  
STYLE 4  
MAC15xxG  
AYWW  
Peak Repetitive OffState Voltage Note 1  
V
V
DRM,  
RRM  
(T = 40 to +125°C, Sine Wave 50 to 60 Hz,  
V
J
Gate Open)  
MAC15A6  
400  
600  
800  
MAC158, MAC15A8  
MAC1510, MAC15A10  
1
2
Peak Gate Voltage  
V
10  
V
A
3
GM  
(Pulse Width v 1.0 msec; T = 90°C)  
C
OnState Current RMS; Full Cycle Sine  
I
T(RMS)  
15  
Wave 50 to 60 Hz (T = +90°C)  
MAC15xx = Specific Device Code  
C
xx  
A
Y
WW  
G
= See Table on Page 2  
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
93  
A s  
Peak NonRepetitive Surge Current (One  
I
150  
A
TSM  
Full Cycle Sine Wave, 60 Hz, T = +80°C)  
C
Preceded and Followed by Rated Current  
Peak Gate Power  
C
P
GM  
20  
W
(T = +80°C, Pulse Width = 1.0 ms)  
PIN ASSIGNMENT  
Average Gate Power (T = +80°C, t = 8.3 ms)  
P
0.5  
2.0  
W
A
C
G(AV)  
1
Main Terminal 1  
Peak Gate Current  
I
GM  
(Pulse Width v 1.0 msec; T = 90°C)  
2
3
4
C
Main Terminal 2  
Gate  
Operating Junction Temperature Range  
Storage Temperature Range  
T
40 to +125 °C  
40 to +150 °C  
J
Main Terminal 2  
T
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
October, 2008 Rev. 4  
MAC15A4/D  
 

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