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MAC15-10G PDF预览

MAC15-10G

更新时间: 2024-11-25 04:17:07
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置三端双向交流开关局域网
页数 文件大小 规格书
6页 70K
描述
Triacs Silicon Bidirectional Thyristors

MAC15-10G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.16
Is Samacsys:N外壳连接:MAIN TERMINAL 2
配置:SINGLE最大直流栅极触发电流:50 mA
最大直流栅极触发电压:2 V最大维持电流:40 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大漏电流:2 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:15 A
断态重复峰值电压:800 V子类别:TRIACs
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:TRIAC
Base Number Matches:1

MAC15-10G 数据手册

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MAC15 Series  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
solid−state relays, motor controls, heating controls and power  
supplies; or wherever full−wave silicon gate controlled solid−state  
devices are needed. Triac type thyristors switch from a blocking to a  
conducting state for either polarity of applied main terminal voltage  
with positive or negative gate triggering.  
http://onsemi.com  
TRIACS  
15 AMPERES RMS  
400 thru 800 VOLTS  
Features  
Blocking Voltage to 800 V  
All Diffused and Glass Passivated Junctions for Greater Parameter  
Uniformity and Stability  
MT2  
MT1  
Small, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or  
Four Modes (MAC15A Series)  
G
MARKING  
DIAGRAM  
Pb−Free Packages are Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
4
Rating  
Symbol  
Value  
Unit  
TO−220AB  
CASE 221A  
STYLE 4  
MAC15xxG  
AYWW  
Peak Repetitive Off−State Voltage Note 1  
V
V
V
DRM,  
RRM  
(T = −40 to +125°C, Sine Wave 50 to 60 Hz,  
J
Gate Open)  
MAC15A6  
400  
600  
800  
MAC15−8, MAC15A8  
MAC15−10, MAC15A10  
1
2
Peak Gate Voltage  
V
10  
V
A
3
GM  
(Pulse Width v 1.0 msec; T = 90°C)  
C
On−State Current RMS; Full Cycle Sine  
I
T(RMS)  
15  
Wave 50 to 60 Hz (T = +90°C)  
MAC15xx = Specific Device Code  
C
xx  
A
Y
WW  
G
= See Table on Page 2  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
93  
A s  
Peak Non−Repetitive Surge Current (One  
I
150  
A
TSM  
Full Cycle Sine Wave, 60 Hz, T = +80°C)  
C
Preceded and Followed by Rated Current  
Peak Gate Power  
P
20  
W
GM  
(T = +80°C, Pulse Width = 1.0 ms)  
C
PIN ASSIGNMENT  
Average Gate Power (T = +80°C, t = 8.3 ms)  
P
0.5  
2.0  
W
A
C
G(AV)  
1
Main Terminal 1  
Peak Gate Current  
I
GM  
(Pulse Width v 1.0 msec; T = 90°C)  
2
3
4
C
Main Terminal 2  
Gate  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125 °C  
−40 to +150 °C  
J
Main Terminal 2  
T
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 3  
MAC15A4/D  
 

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型号 品牌 替代类型 描述 数据表
Q8012LH5TP LITTELFUSE

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