Datasheet > MA784

MA784

更新时间： 2024-11-19 22:46:31

品牌	Logo	应用领域
松下 - PANASONIC		二极管
页数	文件大小	规格书
3页	67K
描述
Schottky Barrier Diodes (SBD)

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中文翻译

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替代型号

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MA784 数据手册

Schottky Barrier Diodes (SBD)

MA2Z784 (MA784)

Silicon epitaxial planar type

Unit: mm

1.25 ^0.1

0.7 0.1

For super high speed switching

For small current rectification

0.35 0.1

0 to 0.1

ꢀ Features

•

High-density mounting is possible

I_F(AV)= 100 mA rectification is possible

Optimum for high frequency rectification because of its short

reverse recovery time (t_rr)

+0.1

0.16

0.5 0.1

–0.06

5°

•

Low forward voltage V_Fand good rectification efficiency

S-Mini type 2-pin package

ꢀ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_R

Rating

Unit

1 : Anode

2 : Cathode

EIAJ : SC-90A

Reverse voltage (DC)

Repetitive peak reverse-voltage

Peak forward current

SMini2-F1 Package

V_RRM

I_FM

I_F(AV)

I_FSM

300

100

Marking Symbol: 2D

Average forward current

Non-repetitive peak forward-s

surge-current ^*

Junction temperature

Storage temperature

T_j

125

°C

T_stg

−55 to +125

Note) : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

ꢀ Electrical Characteristics T_a= 25°C

Parameter

Reverse current (DC)

Forward voltage (DC)

Terminal capacitance

Reverse recovery time ^*

Symbol

Conditions

Min

Typ

Max

Unit

µA

I_R

V_F

C_t

t_rr

V_R= 30 V

I_F= 100 mA

0.55

V_R= 0 V, f = 1 MHz

I_F= I_R= 100 mA

2.0

I_rr= 10 mA, R_L= 100 Ω

Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

2. Rated input/output frequency: 250 MHz

3. : t_rrmeasuring instrument

Bias Application Unit N-50BU

Input Pulse

t_p

Output Pulse

t_rr

t_r

10%

I_F

90%

V_R

I_rr= 10 mA

t_p= 2 µs

t_r= 0.35 ns

δ = 0.05

I_F= 100 mA

I_R= 100 mA

R_L= 100 Ω

Pulse Generator

(PG-10N)

Wave Form Analyzer

(SAS-8130)

R_s= 50 Ω

R_i= 50 Ω

Note) The part number in the parenthesis shows conventional part number.

Publication date: August 2001

SKH00037AED

12 3

中文翻译

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MA784 替代型号

型号	品牌	替代类型	描述	数据表
RB500V-40-TP	MCC	功能相似	Rectifier Diode, Schottky, 1 Element, 0.1A, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
1SS367	TOSHIBA	功能相似	DIODE (HIGH SPEED SWITCHING APPLICATION)
MA2Z784	PANASONIC	功能相似	Silicon epitaxial planar type

与MA784相关器件

型号	品牌	获取价格	描述	数据表
MA78432MAN	MURATA	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 50V, X7R, 0.0043uF, SURFACE MOUNT, 0706, CHIP
MA78432MBN	MURATA	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 50V, X7R, 0.0043uF, SURFACE MOUNT, 0706, CHIP
MA78432ZBN	MURATA	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 50V, X7R, 0.0043uF, SURFACE MOUNT, 0706, CHIP
MA78471J	MURATA	获取价格	Ceramic Capacitor, Ceramic, 5% +Tol, 5% -Tol, X7R, -/+15ppm/Cel TC, 0.00047uF, 0706,
MA78472K	MURATA	获取价格	Ceramic Capacitor, Ceramic, 10% +Tol, 10% -Tol, X7R, -/+15ppm/Cel TC, 0.0047uF, 0706,
MA78472KAN	MURATA	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 50V, X7R, 0.0047uF, SURFACE MOUNT, 0706, CHIP
MA78472M	MURATA	获取价格	Ceramic Capacitor, Ceramic, 20% +Tol, 20% -Tol, X7R, -/+15ppm/Cel TC, 0.0047uF, 0706,
MA78472ZAN	MURATA	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 50V, X7R, 0.0047uF, SURFACE MOUNT, 0706, CHIP
MA78473J	MURATA	获取价格	Ceramic Capacitor, Ceramic, 5% +Tol, 5% -Tol, X7R, -/+15ppm/Cel TC, 0.047uF, 0706,
MA78473K	MURATA	获取价格	Ceramic Capacitor, Ceramic, 10% +Tol, 10% -Tol, X7R, -/+15ppm/Cel TC, 0.047uF, 0706,

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