MA4P202,303,504,505,506 & 604
Packaged PIN Diodes - ODS-255 Case Style
M/A-COM Products
Rev. V3
Absolute Maximum Ratings1
@ TA = +25 °C (unless otherwise specified)
Features
•
•
•
•
•
High Power PIN Diodes
Fast Speed PIN Diodes
Voltage Ratings to 1000 Volts
Long Carrier Lifetime Designs
High Reliability for Space/Military Applications
Parameter
Absolution Max.
Voltage
Voltage Rating
Operating Temperature
Storage Temperature
- 65°C to +175°C
-65°C to +200°C
Description and Applications
MA-COM's product line of packaged PIN diodes
represents a comprehensive combination of PIN
diode electrical characteristics and package outlines.
This union of semiconductor and packaging technol-
ogy gives considerable design flexibility to the PIN
diode circuit designer. The fast switching speed PIN
diodes utilize thin I-region silicon dioxide passivated
chips that incorporate careful control of semiconduc-
tor processing. These diodes achieve consistent
performance in control circuit applications. The
packaged CERMACHIP PIN diodes employ MA-
COM's unique hard glass passivated, hermetically
sealed PIN diode chip. The packaged CERMACHIP
PIN diodes are designed for use in high power and
high RF voltage applications. The PIN diode chips
are bonded into hermetically sealed ceramic or glass
packages that are designed for high volume, close
tolerance utilization. Packages are available which
are suitable for mounting in a variety of microwave
and RF circuit media. The packaged silicon PIN di-
ode series has high inherent reliability and is capa-
ble of meeting stringent environmental tests. These
diodes may be ordered with testing to selected reli-
ability levels.
Pdiss =
T (max Operating)-25C
Thermal Resistance
Max Power Dissipation
1. Operation of this device above any one of these parameters
may cause permanent damage.
Dimension
INCHES
MM
A
B
0.077
0.054
0.083
0.063
1.96
1.37
2.11
1.6
Electrical Specifications TA= +25 C
Nominal Characteristics
Maximum
Junction
Capacitance (pF)
Cj @ VR 1 MHz (pF)
Maximum
Series
Resistance
( Ω )
Minimum Reverse
Voltage
Part Number
I Region
Carrier Lifetime TL
VR @-10μA (VDC
)
Thickness (μm)
MA4P202-255
MA4P303-255
MA4P504-255
MA4P505-255
MA4P506-255
MA4P604-255
100
200
500
500
500
1000
0.05 @10V
0.15 @ 10V
0.20 @ 100V
0.35 @ 100V
0.70 @ 100V
0.30 @ 100V
2.5 @ 10mA
1.5 @ 10mA
200nsec
300nsec
1usec
19
20
50
50
50
90
0.60 @ 100mA
0.45 @ 100mA
0.30 @ 100mA
1.00 @ 100mA
2 usec
3usec
3usec
1
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
5秒后页面跳转
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
