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MA2ZV06 PDF预览

MA2ZV06

更新时间: 2024-11-10 22:06:23
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 42K
描述
Silicon epitaxial planar type

MA2ZV06 数据手册

 浏览型号MA2ZV06的Datasheet PDF文件第2页 
Variable Capacitance Diodes  
MA2ZV06  
Silicon epitaxial planar type  
Unit : mm  
For VCO  
INDICATES  
CATHODE  
0.4 0.15  
I Features  
1
2
Good linearity and large capacitance-ratio in CD VR relation  
Small series resistance rD  
S-mini type package, allowing downsizing of equipment and  
automatic insertion through the taping package  
0.4 0.15  
1.7 0.1  
2.5 0.2  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Junction temperature  
Storage temperature  
Symbol  
VR  
Rating  
Unit  
V
6
Tj  
150  
°C  
°C  
1 : Anode  
2 : Cathode  
Tstg  
55 to +150  
S-Mini Type Package (2-pin)  
Marking Symbol: 8C  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Reverse current (DC)  
Diode capacitance  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
10  
Unit  
nA  
pF  
pF  
VR = 5 V  
CD(1V)  
CD(4V)  
CD(1V)/CD(4V)  
rD  
VR = 1 V, f = 1 MHz  
VR = 4 V, f = 1 MHz  
37.0  
14.6  
2.40  
41.0  
16.2  
2.70  
0.3  
Capacitance ratio  
Series resistance*  
VR = 4 V, f = 470 MHz  
Note) 1Rated input/output frequency: 470 MHz  
2* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER  
1

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