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MA24D62 PDF预览

MA24D62

更新时间: 2024-11-11 21:16:19
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
3页 353K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon, ROHS COMPLIANT, TMINIP2-F1, 2 PIN

MA24D62 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.82应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大反向恢复时间:0.025 µs表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

MA24D62 数据手册

 浏览型号MA24D62的Datasheet PDF文件第2页浏览型号MA24D62的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Schottky Barrier Diodes (SBD)  
MA24D62  
Silicon epitaxial planar type  
For rectification  
Unit: mm  
2.40±0.10  
0.15±0.05  
Features  
1
Allowing low-profile mounting  
Forward current (Average) IF(AV) = 2Arectification is possible  
Extremely low reverse current IR  
Absolute Maximum Ratings T
a
= 25
°
C  
.05  
Parameter  
Reverse voltage  
Symbol  
VR  
Rating  
Unit  
V
40  
5°  
Maximum peak reverse voltage  
VRM  
IF(AV)  
IFM  
Tj  
4
V
1
Forward current (Average)
*  
A
2
Non-repetitive peak forward surge current
*  
60  
A
Junction temperature  
150  
°
C  
°
C  
1: Anode  
2: Cathode  
Storage temperature  
T
stg  
40 t+150  
TMiniP2-F1 Package  
Note) 1: Mounted on an alumina PC oard  
*
Marking Symbol: 5Y  
2: 50 Hz sine wave 1 ccle Non-rpetitive peak curent)  
*
Electrical Charateristics T
a
= 25
°
C±
Para
Forward votage  
Symbol  
Conditions  
Min  
Typ  
Max  
0.51  
50  
Unit  
V
V
IR  
IF = 2.0A  
V
R
= 40 V  
0.46  
Reverse curret  
µA  
pF  
Terminal capacita
Ct  
VR = 10 V, f = 1 MHz  
75  
25  
IF = IR = 100 mA, Irr = 10 mA,  
R
L
= 100 Ω  
Reverse recovery t
trr  
ns  
1
*
Rth(j-a)  
Rth(j-a)  
55  
210  
10  
Thermal resistance (j-a)  
Thermal resistance (j-l)  
°
C/W  
°
C/W  
2
*
Rth(j-l)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage  
of current from the operating equipment.  
3. 1: Mounted on an alumina PC board  
*
2: With a glass epoxy PC board  
3: trr measurement circuit  
*
*
Bias Application Unit (N-50BU)  
Input Pulse  
tp  
Output Pulse  
t
t
t
10%  
IF  
t
A
90%  
VR  
I
10 mA  
tp 2 µ  
IF IR 100 mA  
t
0.35 ns  
RL 100 Ω  
Pulse Generator  
(PG-10N)  
50 Ω  
Wave Form Analyzer  
(SAS-8130)  
Ri 50 Ω  
δ = 0.05  
R
Publication date: September 2006  
SKH00155AED  
1

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