Datasheet > MA01503D_1

MA01503D_1

更新时间： 2024-12-01 03:50:35

品牌	Logo	应用领域
泰科 - TE		放大器限制器
页数	文件大小	规格书
7页	348K
描述
X-Band Limiter/Low Noise Amplifier 8.5 -12.0 GHz

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MA01503D_1 数据手册

RO-P-DS-3003 - -

X-Band Limiter/Low Noise Amplifier

8.5 –12.0 GHz

Features

8.5-12.0 GHz GaAs MMIC Amplifier

♦ 8.5 to 12.0 GHz Operation

♦ 10 Watt CW On-chip Limiter

♦ Balanced Design –Excellent Return Loss

♦ Self-Aligned MSAG^®MESFET Process

Primary Applications

♦ Weather Radar

♦ Airborne Radar

Description

The MA01503D is a balanced 3-stage low noise amplifier

with on-chip, receiver protecting 10 Watt limiter. This

product is fully matched to 50 ohms on both the input and

output.

Each device is 100% RF tested on wafer to ensure

performance compliance. The part is fabricated using M/A-

COM’s repeatable, high performance and highly reliable GaAs

Multifunction Self-Aligned Gate (MSAG^®) MESFET Process.

This process features silicon oxi-nitride passivation and poly-

imide scratch protection.

Electrical Characteristics: T_B= 25°C¹, Z₀= 50Ω, V_DD= 5V, V_GG= -5V

Parameter

Symbol

Minimum

Typical

Maximum

Units

Bandwidth

8.5

12.0

GHz

Small Signal Gain

1-dB Compression Point

Input Return Loss

dBm

P1dB

IRL

Output Return Loss

ORL

Noise Figure

2.7

190

3.5

240

I_DD

Drain Current

dBm

Gate Current

I_GG

Input Third Order Intercept Point

Drain Current (Max at Pin= 10W)

Power Handling (CW up to 30 minutes)

ITOI

I_DMAX

P_RF

60+I_DD

1. T_B= MMIC Base Temperature

12 3 4 5 6 7

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