Datasheet > M95080-DRDW3TG

M95080-DRDW3TG

更新时间： 2024-11-17 00:41:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
42页	777K
描述
Automotive 8-Kbit serial SPI bus EEPROMs

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中文翻译

获取价格

数据手册

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M95080-DRDW3TG 数据手册

M95080-A125

M95080-A145

Automotive 8-Kbit serial SPI bus EEPROMs

with high-speed clock

Datasheet - production data

Features

• Compatible with the Serial Peripheral Interface

(SPI) bus

• Memory array

SO8 (MN)

150 mil width

– 8 Kbit (1 Kbyte) of EEPROM

– Page size: 32 byte

– Write protection by block: 1/4, 1/2 or whole

memory

– Additional Write lockable Page

(Identification page)

TSSOP8 (DW)

169 mil width

• Extended temperature and voltage ranges

– Up to 125 °C (V from 1.7 V to 5.5 V)

– Up to 145 °C (V from 2.5 V to 5.5 V)

• High speed clock frequency

– 20 MHz for V ≥ 4.5 V

– 10 MHz for V ≥ 2.5 V

– 5 MHz for V ≥ 1.7 V

WFDFPN8 (MF)

2 x 3 mm

• Schmitt trigger inputs for noise filtering

• Short Write cycle time

– Byte Write within 4 ms

– Page Write within 4 ms

• Write cycle endurance

– 4 million Write cycles at 25 °C

– 1.2 million Write cycles at 85 °C

– 600 k Write cycles at 125 °C

– 400 k Write cycles at 145 °C

• Data retention

– 50 years at 125 °C

– 100 years at 25 °C

• ESD Protection (Human Body Model)

– 4000 V

• Packages

– RoHS-compliant and halogen-free

(ECOPACK2 )

February 2016

DocID024205 Rev 8

1/42

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...42

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