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M95080-DRMN4TG PDF预览

M95080-DRMN4TG

更新时间: 2024-11-17 00:41:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
42页 777K
描述
Automotive 8-Kbit serial SPI bus EEPROMs

M95080-DRMN4TG 数据手册

 浏览型号M95080-DRMN4TG的Datasheet PDF文件第2页浏览型号M95080-DRMN4TG的Datasheet PDF文件第3页浏览型号M95080-DRMN4TG的Datasheet PDF文件第4页浏览型号M95080-DRMN4TG的Datasheet PDF文件第5页浏览型号M95080-DRMN4TG的Datasheet PDF文件第6页浏览型号M95080-DRMN4TG的Datasheet PDF文件第7页 
M95080-A125  
M95080-A145  
Automotive 8-Kbit serial SPI bus EEPROMs  
with high-speed clock  
Datasheet - production data  
Features  
Compatible with the Serial Peripheral Interface  
(SPI) bus  
Memory array  
SO8 (MN)  
150 mil width  
– 8 Kbit (1 Kbyte) of EEPROM  
– Page size: 32 byte  
– Write protection by block: 1/4, 1/2 or whole  
memory  
– Additional Write lockable Page  
(Identification page)  
TSSOP8 (DW)  
169 mil width  
Extended temperature and voltage ranges  
– Up to 125 °C (V from 1.7 V to 5.5 V)  
CC  
– Up to 145 °C (V from 2.5 V to 5.5 V)  
CC  
High speed clock frequency  
– 20 MHz for V 4.5 V  
CC  
– 10 MHz for V 2.5 V  
CC  
– 5 MHz for V 1.7 V  
CC  
WFDFPN8 (MF)  
2 x 3 mm  
Schmitt trigger inputs for noise filtering  
Short Write cycle time  
– Byte Write within 4 ms  
– Page Write within 4 ms  
Write cycle endurance  
– 4 million Write cycles at 25 °C  
– 1.2 million Write cycles at 85 °C  
– 600 k Write cycles at 125 °C  
– 400 k Write cycles at 145 °C  
Data retention  
– 50 years at 125 °C  
– 100 years at 25 °C  
ESD Protection (Human Body Model)  
– 4000 V  
Packages  
– RoHS-compliant and halogen-free  
®
(ECOPACK2 )  
February 2016  
DocID024205 Rev 8  
1/42  
This is information on a product in full production.  
www.st.com  

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