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M93C66-A125 PDF预览

M93C66-A125

更新时间: 2024-10-29 01:16:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
31页 563K
描述
READY/BUSY signal during programming

M93C66-A125 数据手册

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M93Cx6-A125  
Automotive 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit  
(8-bit or 16-bit wide) MICROWIRE™ serial EEPROM  
Datasheet - production data  
Features  
Industry standard MICROWIRE™ bus  
Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb  
Dual organization: by word (x16) or byte (x8)  
Write  
SO8 (MN)  
150 mil width  
– Byte within 4 ms  
– Word within 4 ms  
READY/BUSY signal during programming  
2 MHz clock rate  
Sequential read operation  
Single supply voltage: 1.8 V to 5.5 V  
TSSOP8 (DW)  
169 mil width  
Operating temperature range: -40 °C up to  
125 °C  
Enhanced ESD protection  
Write cycle endurance  
– 4 million Write cycles at 25 °C  
– 1.2 million Write cycles at 85 °C  
– 600 k Write cycles at 125 °C  
WFDFPN8 (MF)  
2 x 3 mm  
Data retention  
– 50 years at 125 °C  
– more than 100 years at 25 °C  
Packages  
– RoHS-compliant and Halogen-free  
®
(ECOPACK2 )  
Table 1. Device summary  
Reference  
Part number  
M93C46-A125  
M93C56-A125  
M93C66-A125  
M93C76-A125  
M93C86-A125  
M93Cx6-A125  
January 2015  
DocID024752 Rev 5  
1/31  
This is information on a product in full production.  
www.st.com  
 
 

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