生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | BGA, | 针数: | 72 |
Reach Compliance Code: | unknown | HTS代码: | 8542.32.00.71 |
风险等级: | 5.84 | 其他特性: | COMBINATION OF 3.3V FLASH MEM & SRAM IN -CSP; ACCESS TIME FOR FLASH MEM IS 90NS & FOR SRAM 85 NS |
JESD-30 代码: | R-PBGA-B72 | 内存密度: | 16777216 bit |
内存集成电路类型: | MEMORY CIRCUIT | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 72 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -20 °C | 组织: | 1MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M6MGB166S4BWG | MITSUBISHI |
获取价格 |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP | |
M6MGB166S4BWG-85 | MITSUBISHI |
获取价格 |
Memory Circuit, 1MX16, CMOS, PBGA72, 0.80 MM PITCH, CSP-72 | |
M6MGB166S4BWG-90 | MITSUBISHI |
获取价格 |
Memory Circuit, 1MX16, CMOS, PBGA72, 0.80 MM PITCH, CSP-72 | |
M6MGB331S4BKT | RENESAS |
获取价格 |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH M | |
M6MGB331S8AKT | RENESAS |
获取价格 |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8 | |
M6MGB331S8BKT | RENESAS |
获取价格 |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8 | |
M6MGB641S8AKT | RENESAS |
获取价格 |
M6MGB641S8AKT | |
M6MGB647M17AKT | RENESAS |
获取价格 |
M6MGB647M17AKT | |
M6MGB647M34CKT | RENESAS |
获取价格 |
M6MGB647M34CKT | |
M6MGB64BM17AWG | RENESAS |
获取价格 |
M6MGB64BM17AWG |