Datasheet > M6MGB641S8AKT

M6MGB641S8AKT

更新时间： 2024-02-03 01:41:08

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
3页	115K
描述
M6MGB641S8AKT

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技术参数
数据手册

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M6MGB641S8AKT 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

M6MGB641S8AKT 数据手册

Renesas LSIs

M6MGB/T641S8AKT

67,108,864-BIT (4,194,304-WORD BY 16-BIT / 8,388,608-WORD BY 8-BIT) CMOS

FLASH MEMORY &

8,388,608-BIT (524,288-WORD BY 16-BIT / 1,048,576-WORD BY 8BIT) CMOS SRAM

Stacked- mMCP (micro Multi Chip Package)

DESCRIPTION

The M6MGB/T641S8AKT is a Stacked micro Multi Chip

Package (S- m MCP) that contents 64M-bit Flash memory

and 8M-bit Static RAM and are available in a 52-pin TSOP

for lead free use.

The M6MGB/T641S8AKT is suitable for a high performance

cellular phone and a mobile PC that are required to be small

mounting area, weight and small power dissipation.

FEATURES

64M-bit Flash memory is a 4,194,304 words / 8,388,608

bytes single power supply and high performance non-

volatile memory fabricated by CMOS technology for the

peripheral circuit and DINOR IV (Divided bit-line NOR IV)

architecture for the memory cell. All memory blocks are

Access time

Flash

SRAM

70ns (Max.)

85ns (Max.)

Supply voltage

VCC = 2.7 ~ 3.0V

locked and can not be programmed or erased, when F-WP# Ambient temperature

is Low. Using Software Lock Release function, program or

erase operation can be executed.

Ta=-40 ~ 85 °C

Package

52pin TSOP(Type-II), Lead pitch 0.4mm

Outer-lead finishing : Sn-Cu

8M-bit SRAM is a 524,288 words / 1,048576 bytes

asynchronous SRAM fabricated by CMOS technology for

the peripheral circuit and CMOS type transistor for the

memory cell.

APPLICATION

Mobile communication products

PIN CONFIGURATION (TOP VIEW)

A15

A14

A13

A12

A11

A10

A16

BYTE#

S-UB#

GND

S-LB#

DQ15/A-1

DQ7

DQ14

DQ6

A19

DQ13

DQ5

S-CE1#

WE#

F-RP#

F-WP#

S-VCC

S-CE2

A21

DQ12

DQ4

M6MGB/T641S8AKT

F-VCC

DQ11

DQ3

DQ10

DQ2

A20

A18

DQ9

A17

DQ1

DQ8

DQ0

OE#

GND

F-CE#

10.49 mm

Outline 52PTJ-A

F-VCC

S-VCC

GND

A-1-A18

A19-A21

DQ0-DQ15

F-CE#

S-CE#,S-CE2

OE#

:Vcc for Flash

:Vcc for SRAM

WE#

:Flash/SRAM Write Enable

:Flash Write Protect

:Flash Reset Power Down

:Flash/SRAM Byte Enable

:SRAM Lower Byte

F-WP#

F-RP#

BYTE#

S-LB#

S-UB#

:GND for Flash/SRAM

:Flash/SRAM common Address

:Address for Flash

:Data I/O

:Flash Chip Enable

:SRAM Chip Enable

:Flash/SRAM Output Enable

:SRAM Upper Byte

Rev.1.0_48a_bebz

12 3

中文翻译

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与M6MGB641S8AKT相关器件

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M6MGB64BM34CWG	RENESAS	获取价格	M6MGB64BM34CWG
M6MGB64BS8AWG-P	RENESAS	获取价格	M6MGB64BS8AWG-P
M6MGB64BS8BWG	RENESAS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA67, 0.80 MM PITCH, LEAD FREE, STACKED, CSP-67
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