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M6MGT166S4BWG-85 PDF预览

M6MGT166S4BWG-85

更新时间: 2024-02-01 19:40:02
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三菱 - MITSUBISHI /
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M6MGT166S4BWG-85 数据手册

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MITSUBISHI LSIs  
M6MGB/T166S4BWG  
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS  
3.3V-ONLY FLASH MEMORY &  
4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM  
Stacked-CSP (Chip Scale Package)  
DESCRIPTION  
FEATURES  
The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip  
Scale Package (S-CSP) that contents 16M-bits flash  
memory and 4M-bits Static RAM in a 72-pin S-CSP.  
• Access time  
Flash Memory  
SRAM  
90ns (Max.)  
85ns (Max.)  
Vcc=2.7 ~ 3.6V  
• Supply voltage  
• Ambient temperature  
W version  
16M-bits Flash memory is a 1,048,576 words, 3.3V-only,  
and high performance non-volatile memory fabricated by  
CMOS technology for the peripheral circuit and  
DINOR(DIvided bit-line NOR) architecture for the memory  
cell.  
Ta=-20 ~ 85°C  
• Package : 72-pin S-CSP , 0.8mm ball pitch  
4M-bits SRAM is a 262,144words unsynchronous SRAM  
fabricated by silicon-gate CMOS technology.  
APPLICATION  
Mobile communication products  
M6MGB/T166S4BWG is suitable for the application of the  
mobile-communication-system to reduce both the mount  
space and weight .  
PIN CONFIGURATION (TOP VIEW)  
INDEX  
H
G
F
E
D
C
B
A
NC  
NC  
1
2
F-VCC  
:Vcc for Flash  
NC  
DU  
A5  
NC  
S-VCC  
F-GND  
GND  
:Vcc for SRAM  
:GND for Flash  
GND  
F-A18 S-LB#  
F-A17 S-UB#  
F-WE#  
F-  
F-WP#  
A16 DU  
A8 A11  
A10 A15  
A9 A14  
3
:Flash/SRAM common GND  
F-RP# RY/BY#  
DU  
4
A0-A16  
:Flash/SRAM  
common Address  
F-A19  
A7  
S-OE#  
DU DU  
A4  
5
:Address for Flash  
:Address for SRAM  
F-A17-F-A19  
S-A17  
DQ11  
S-A17  
A0  
A6 DU  
DU  
6
DQ0-DQ15  
:Flash/SRAM  
common Data I/O  
F-CE#  
F-GND  
F-OE#  
DU  
NC  
NC  
DQ12  
DQ13  
DQ15  
A3  
A13  
DQ9 DU  
7
F-CE#  
S-CE1#  
S-CE2  
F-OE#  
S-OE#  
F-WE#  
S-WE#  
F-WP#  
F-RP#  
:Flash Chip Enable  
:SRAM Chip Enable  
:SRAM Chip Enable  
S-  
CE2  
DQ10  
S-WE#  
A2 DQ8  
DQ6  
A12  
8
S-VCC  
F-VCC  
DQ14  
A1  
F-GND  
DQ0 DQ2  
DQ1 DQ3  
DQ4  
9
:Flash Output Enable  
:SRAM Output Enable  
S-  
CE1#  
DU  
NC  
NC  
DQ5 DQ7  
10  
11  
12  
:Flash Write Enable  
:SRAM Write Enable  
:Flash Write Protect  
:Flash Reset Power Down  
:Flash Ready /Busy  
:SRAM Lower Byte  
:SRAM Upper Byte  
F-RY/BY#  
S-LB#  
S-UB#  
8.0 mm  
NC:Non Connection  
DU:Don't Use (Note: Should be open)  
1
Apr. 1999 , Rev.1.7  

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