Datasheet > M6MGT647M17AKT

M6MGT647M17AKT

更新时间： 2024-02-12 11:04:20

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
3页	113K
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M6MGT647M17AKT

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M6MGT647M17AKT 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

M6MGT647M17AKT 数据手册

Renesas LSIs

M6MGB/T647M17AKT

67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY

16,777,216-BIT (1,048,576-WORD BY 16-BIT) CMOS MOBILE RAM

Stacked-uMCP (micro Multi Chip Package)

Description

The M6MGB/T647M17AKT is suitable for a high

performance cellular phone and a mobile PC that are

required to be small mounting area, weight and small power

dissipation.

The M6MGB/T647M17AKT is a Stacked micro Multi Chip

Package (S-uMCP) that contents 64M-bit Flash memory and

16M-bit Mobile RAM in a 52-pin TSOP for lead free use.

64M-bit Flash memory is a 4,194,304 words, single power

supply and high performance non-volatile memory fabricated

by CMOS technology for the peripheral circuit and DINOR IV

(Divided bit-line NOR IV) architecture for the memory cell. All

memory blocks are locked and can not be programmed or

erased, when F-WP# is Low. Using Software Lock Release

function, program or erase operation can be executed.

Features

Access Time

Flash

70ns (Max.)

Mobile RAM

85ns (Max.)

Supply Voltage

FM-VCC=2.7 ~ 3.0V

Ta=-40 ~ 85 degree

52pin TSOP(Type-II),

Lead pitch 0.4mm

Ambient Temperature

Package

16M-bit Mobile RAM is a 1,048,576 words high density RAM

fabricated by CMOS technology for the peripheral circuit and

DRAM cell for the memory array. The interface is compatible

to an asynchronous SRAM.

Outer-lead finishing:Sn-Cu

The cells are automatically refreshed and the refresh control

is not required for system. The device also has the partial

block refresh scheme and the power down mode by writing

the command.

Application

Mobile communication products

PIN CONFIGURATION (TOP VIEW)

A15

A14

A13

A12

A11

A10

A16

M-CE#

M-UB#

GND

M-LB#

DQ15

DQ7

DQ14

DQ6

A19

DQ13

DQ5

WE#

F-RP#

F-WP#

DQ12

DQ4

FM-VCC

DQ11

DQ3

A21

A20

A18

A17

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

GND

F-CE#

Outline

52PTJ-A

10.49 mm

FM-VCC :Common VCC for Flash/Mobile RAM

OE#

:Output enable for Flash/Mobile RAM

GND

A0-A19

:Common GND for Flash/Mobile RAM

:Common address for Flash/Mobile RAM

WE# :Write enable for Flash/Mobile RAM

F-WP# :Write protect for Flash

A20,A21 :Common address for Flash

DQ0-DQ15 :Data I/O

F-RP# :Reset power down for Flash

M-LB# :Lower byte control for Mobile RAM

M-UB# :Upper byte control for Mobile RAM

F-CE#

M-CE#

:Flash chip enable

:Mobile RAM chip enable

Rev.1.2_48a_bezb

12 3

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