Datasheet > M6MGD137W34DKT

M6MGD137W34DKT

更新时间： 2024-02-29 04:38:02

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
3页	116K
描述
M6MGD137W34DKT

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M6MGD137W34DKT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.81	湿度敏感等级：	3
Base Number Matches：	1

M6MGD137W34DKT 数据手册

Renesas LSIs

Preliminary

Notice: This is not a final specification.

Some parametric limits are subject to change.

M6MGD137W34DKT

134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY

33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS mobileRAM

Stacked- mMCP (micro Multi Chip Package)

DESCRIPTION

The M6MGD137W34DKT is a Stacked micro Multi Chip

Package (S- mMCP) that contents 128M-bit Flash memory

and 32M-bit mobileRAM in a 52-pin TSOP for lead free use.

The M6MGD137W34DKT is suitable for a high performance

cellular phone and a mobile PC that are required to be small

mounting area, weight and small power dissipation.

128M-bit Flash memory is a 8,388,608 words, single

power supply and high performance non-volatile memory

fabricated by CMOS technology for the peripheral circuit

and DINOR IV (Divided bit-line NOR IV) architecture for the

memory cell. All memory blocks are locked and can not be

programmed or erased, when F-WP# is Low. Using

Software Lock Release function, program or erase

operation can be executed.

FEATURES

Access time

Flash

mobileRAM

70ns (Max.)

80ns (Max.)

Supply voltage

FM-VCC = 2.7 ~ 3.0V

Ta=-40 ~ 85 °C

Ambient temperature

Package

32M-bit mobileRAM is a 2,097,152 words high density

RAM fabricated by CMOS technology for the peripheral

circuit and DRAM cell for the memory array. The interface is

compatible to an asynchronous SRAM.

52pin TSOP(Type-II),

Lead pitch 0.4mm

Outer-lead finishing:Sn-Cu

The cells are automatically refreshed and the refresh control

is not required for system. The device also has the partial

block refresh scheme and the power down mode by writing

the command.

APPLICATION

Mobile communication products

PIN CONFIGURATION (TOP VIEW)

A15

A14

A13

A12

A11

A10

A16

F-CE2 #

M-UB

GND

M-LB

DQ15

DQ7

DQ14

DQ6

A19

DQ13

DQ5

M-CE

M6MGD137W34DKT

DQ12

DQ4

F-RP

F-WP

A21

A20

A18

A17

FM-VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

GND

F-CE

Outline

52PTJ-A

10.49 mm

FM-VCC

GND

A0-A20

A21

DQ0-DQ15

F-CE1#

F-CE2#

M-CE#

:Common VCC for Flash / mobileRAM

:Common GND for Flash / mobileRAM

:Common address for Flash / mobileRAM

:Address for Flash

:Data I/O

:Flash chip enable1

OE#

WE#

F-WP#

F-RP#

M-LB#

M-UB#

:Output enable for Flash/mobileRAM

:Write enable for Flash/mobileRAM

:Write protect for Flash

:Reset power down for Flash

:Lower byte control for mobileRAM

:Upper byte control for mobileRAM

:Flash chip enable2

:mobileRAM chip enable

Rev.1.0.48a_bezc

12 3

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与M6MGD137W34DKT相关器件

型号	品牌	描述	获取价格	数据表
M6MGD137W34DWG	RENESAS	134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-W	获取价格
M6MGD13TW34DWG	RENESAS	134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-W	获取价格
M6MGD13TW34DWG-P	RENESAS	M6MGD13TW34DWG-P	获取价格
M6MGD13TW66CWG-P	RENESAS	134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-W	获取价格
M6MGD13VW34DWG-P	RENESAS	M6MGD13VW34DWG-P	获取价格
M6MGD13VW66CWG	RENESAS	SPECIALTY MEMORY CIRCUIT, PBGA72, 0.80 MM PITCH, LEAD FREE, STACKED, CSP-72	获取价格

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