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M68AF031AL55B6F PDF预览

M68AF031AL55B6F

更新时间: 2024-01-26 23:51:48
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器
页数 文件大小 规格书
22页 385K
描述
256 Kbit (32K x 8) 5.0V Asynchronous SRAM

M68AF031AL55B6F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.600 INCH, LEAD FREE, PLASTIC, DIP-28
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.82最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PDIP-T28
JESD-609代码:e3长度:37.085 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):245电源:5 V
认证状态:Not Qualified座面最大高度:5.08 mm
最大待机电流:0.000006 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
Base Number Matches:1

M68AF031AL55B6F 数据手册

 浏览型号M68AF031AL55B6F的Datasheet PDF文件第6页浏览型号M68AF031AL55B6F的Datasheet PDF文件第7页浏览型号M68AF031AL55B6F的Datasheet PDF文件第8页浏览型号M68AF031AL55B6F的Datasheet PDF文件第10页浏览型号M68AF031AL55B6F的Datasheet PDF文件第11页浏览型号M68AF031AL55B6F的Datasheet PDF文件第12页 
M68AF031A  
Table 4. Capacitance  
Symbol  
Test  
Condition  
(1,2)  
Min  
Max  
Unit  
Parameter  
C
V
= 0V  
= 0V  
Input Capacitance on all pins (except DQ)  
Output Capacitance  
6
8
pF  
pF  
IN  
IN  
C
V
OUT  
OUT  
Note: 1. Sampled only, not 100% tested.  
2. At T = 25°C, f = 1 MHz, V = 5.0V.  
A
CC  
Table 5. DC Characteristics (M68AF031A-55 and M68AF031A-70)  
Symbol  
Parameter  
Test Condition  
Min  
Typ  
Max  
Unit  
V
= 5.5V, f = 1/t  
,
AVAV  
CC  
(1,2)  
Operating Supply Current  
50  
mA  
I
CC1  
I
= 0mA  
OUT  
V
= 5.5V, f = 1MHz,  
CC  
(3)  
Operating Supply Current  
5
mA  
I
CC2  
I
= 0mA  
OUT  
Range 1  
Range 6  
0.1  
0.1  
5
10  
1
µA  
µA  
µA  
V
= 5.5V, f = 0,  
CC  
I
Standby Supply Current CMOS  
SB  
E V –0.2V  
CC  
I
0V V V  
IN CC  
Input Leakage Current  
Output Leakage Current  
–1  
–1  
LI  
(4)  
0V V  
V  
CC  
1
µA  
I
OUT  
LO  
V
V
CC  
+ 0.3  
Input High Voltage  
Input Low Voltage  
Output High Voltage  
Output Low Voltage  
2.2  
–0.3  
2.4  
V
V
V
V
IH  
V
0.8  
0.4  
IL  
V
I
= –1.0mA  
= 2.1mA  
OH  
OH  
V
OL  
I
OL  
Note: 1. Average AC current, cycling at t  
minimum.  
AVAV  
2. E = V , V = V OR V .  
IL  
IN  
IL  
IH  
3. E 0.2V, V 0.2V OR V V –0.2V.  
IN  
IN  
CC  
4. Output disabled.  
9/22  

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