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M5M5408ART-70L-I PDF预览

M5M5408ART-70L-I

更新时间: 2024-11-28 14:20:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
7页 42K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32

M5M5408ART-70L-I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2-R, TSOP32,.46
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.86最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:20.95 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2-R
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified反向引出线:YES
座面最大高度:1.2 mm最大待机电流:0.0001 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

M5M5408ART-70L-I 数据手册

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MITSUBISHI LSIs  
M5M5408AFP,TP,RT-70L-I,-70LL-I,  
-10L-I,-10LL-I  
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
The M5M5408A is 4,194,304-bit CMOS static RAM organized as  
524,288-words by 8-bit, fabricated using high-performance  
quadruple-polysilicon and double metal CMOS technology.  
32 VCC(5V)  
A18  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2 10  
A1  
A0 12  
DQ1 13  
1
2
The use of thin film transistor (TFT) load cells and CMOS periphery  
31  
A15  
results in a high density and low power static RAM.  
The  
3
4
5
30 A17  
M5M5408A is designed for memory applications where the high  
performance, high reliability, large storage, simple interfacing and  
battery back-up are important design objectives.  
The M5M5408A is offered in a 32-pin plastic small outline  
package (SOP) and a 32-pin thin small outline package (TSOP),  
providing high board level packing densities. Two types of TSOP  
packages are available, M5M5408ATP(normal lead bend type  
package) and M5M5408ART (reverse lead bend type package).  
Using both two types makes it easy to design a printed circuit  
board.  
29  
W
A13  
28  
6
7
8
27 A8  
26 A9  
25  
A11  
9
24  
OE  
23 A10  
11  
22  
S
21 DQ8  
20 DQ7  
14  
19  
DQ2  
DQ6  
FEATURES  
DQ3 15  
(0V)GND 16  
18 DQ5  
17 DQ4  
Access  
time  
Power supply current  
Type  
Active  
(max)  
Stand-by  
(max)  
Outline 32P2M-A(FP)  
32P3Y-H(TP)  
(max)  
M5M5408AFP,TP,RT-70L-I  
M5M5408AFP,TP,RT-10L-I  
70ns  
100ns  
200µA  
(Vcc=5.5v)  
90mA  
(Vcc=5.5V)  
(5V)VCC  
32  
1 A18  
A15 31  
A17 30  
W
2 A16  
3 A14  
4 A12  
40µA  
(Vcc=5.5v)  
M5M5408AFP,TP,RT-70LL-I 70ns  
M5M5408AFP,TP,RT-10LL-I 100ns  
29  
A13 28  
A8 27  
A9 26  
A11 25  
5
A7  
A6  
A5  
A4  
A3  
6
7
8
• Single +5V power supply  
• No clocks, No refresh  
• All inputs and outputs are TTL compatible.  
• Easy memory expansion and power down by S  
• Data retention supply voltage=+2.0V  
• Three-state outputs: OR-tie capability  
• OE prevents data contention in the I/O bus  
• Common Data I/O  
24  
9
OE  
A10 23  
S
DQ8 21  
DQ7 20  
10 A2  
22  
11  
A1  
12 A0  
13 DQ1  
• Small stand-by current………………0.4µA(typ.)  
• Package  
19  
14  
DQ6  
DQ2  
DQ5 18  
DQ4 17  
15 DQ3  
16 GND(0V)  
M5M5408AFP : 32 pin 525 mil SOP  
M5M5408ATP : 32 pin 400 mil TSOP(II)  
M5M5408ART : 32 pin 400 mil TSOP(II)  
Outline 32P3Y-J(RT)  
APPLICATION  
Small capacity memory units, IC card, Battery operating system,  
asynchronous server system  
MITSUBISHI  
ELECTRIC  
1

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Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32
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Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, REVERSE, TS
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