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M5M5408ATP-70L PDF预览

M5M5408ATP-70L

更新时间: 2024-11-02 09:56:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 静态存储器光电二极管
页数 文件大小 规格书
7页 51K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

M5M5408ATP-70L 数据手册

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MITSUBISHI LSIs  
M5M5408AFP,TP,RT-55L, -70L,-10L  
-55LL,-70LL,-10LL  
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM  
PIN CONFIGURATION (TOP VIEW)  
DESCRIPTION  
The M5M5408A is a 4,194,304-bit CMOS Static RAM organizedas  
524,288-word by 8-bit. This device is fabricated usingMitsubishi's  
high-performance silicon-gate CMOS technology.This state-of-the-art  
process technology, combined withinnovative circuit design  
1
2
32  
31  
A18  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
VCC(5V)  
A15  
A17  
W
A13  
A8  
A9  
A11  
OE  
A10  
3
4
5
30  
29  
28  
techniques, yields  
high-density and low-power devices. The  
M5M5408A is suitable for memoryapplications where high reliability,  
large storage, simpleinterfacing and battery back-up are important  
design objectives.  
The M5M5408A is available in 32-pin plastic SOP(M5M5408AFP) ,  
32-pin plastic normal-lead-bend TSOP(M5M5408ATP) and 32-pin  
plastic reverse-lead-bend TSOP(M5M5408ART) packages. Two  
types of TSOP's are suitable forSurface Mounting on double-sided  
printed circuit boards.  
6
7
8
27  
26  
25  
9
24  
23  
22  
10  
11  
A2  
A1  
A0  
S
12  
13  
14  
21  
20  
19  
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
DQ1  
DQ2  
DQ3  
(0V)GND  
FEATURES  
15  
16  
18  
17  
Access Power supply current  
Type name  
time  
(max.)  
55ns  
Active  
(max.)  
Stand-by  
(max.)  
Outline32P2M-A (AFP)  
32P3Y-H (ATP)  
M5M5408AFP, TP, RT -55L  
M5M5408AFP, TP, RT -70L  
M5M5408AFP, TP, RT -10L  
M5M5408AFP, TP, RT -55LL  
M5M5408AFP, TP, RT -70LL  
M5M5408AFP, TP, RT -10LL  
100µA  
70ns  
30mA  
(Vcc=5.5V*)  
100ns  
55ns  
(1MHz)  
20µA  
(Vcc=5.5V*)  
0.4µA  
32  
31  
30  
1
2
3
(5V)VCC  
A15  
A18  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ1  
DQ2  
DQ3  
GND(0V)  
70ns  
30mA  
100ns  
(1MHz)  
A17  
W
A13  
A8  
A9  
A11  
OE  
A10  
S
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
29  
28  
27  
4
5
6
(Vcc=3V**)  
* at 70°C / **at 25°C  
26  
25  
24  
7
8
9
• Single +5V power supply  
• No clocks, No refresh  
23  
22  
21  
10  
11  
12  
• All inputs and outputs are TTL compatible.  
• Easy memory expansion and power down by S  
• Data retention supply voltage=2.0V to 5.5V  
• Three-state outputs: OR-tie capability  
• OE prevents data contention in the I/O bus  
• Common Data I/O  
20  
19  
18  
13  
14  
15  
• Battery backup capability  
17  
16  
• Small stand-by current…………0.4µA (typical)  
• Package  
M5M5408AFP : 32 pin 525 mil SOP  
M5M5408ATP : 32 pin 400 mil TSOP(II)  
M5M5408ART : 32 pin 400 mil TSOP(II)  
Outline32P3Y-J (ART)  
PIN DISCRIPTION  
A0 ..... A18: ADDRESS INPUTS  
DQ1..... DQ8: DATA INPUTS & OUTPUTS  
S: CHIP SELECT INPUT  
W: WRITE ENABLE INPUT  
OE: OUTPUT ENABLE INPUT  
Vcc: Power supply  
APPLICATION  
Small capacity memory units  
IC card  
Battery operating system  
GND: Ground  
MITSUBISHI  
ELECTRIC  

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