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M5M5255DP-55LL PDF预览

M5M5255DP-55LL

更新时间: 2024-11-30 22:18:03
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
7页 66K
描述
262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

M5M5255DP-55LL 数据手册

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'97.4.7  
MITSUBISHI LSIs  
M5M5255DP,FP -45LL,-55LL,-70LL,  
-45XL,-55XL,-70XL  
262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized  
as 32,768-words by 8-bits which is fabricated using  
A14  
A12  
Vcc  
/W  
28  
27  
26  
25  
1
2
3
high-performance 3 polysilicon CMOS technology. The use of  
resistive load NMOS cells and CMOS periphery results in a high  
density and low power static RAM. Stand-by current is small  
enough for battery back-up application. It is ideal for the memory  
systems which require simple interface.  
A7  
A6  
A5  
A4  
A13  
A8  
4
24 A9  
5
A11  
S2  
23  
22  
21  
20  
19  
6
7
A3  
A2  
A1  
A0  
DQ1  
DQ2  
8
9
A10  
/S1  
DQ8  
FEATURE  
10  
11  
12  
18 DQ7  
DQ6  
DQ5  
17  
16  
15  
Power supply current  
Active Stand-by  
Access  
time  
DQ3 13  
GND  
14  
Type  
DQ4  
(max)  
45ns  
55ns  
70ns  
(max)  
(max)  
Outline 28P4 (DP)  
28P2W-C (DFP)  
M5M5255DP, FP-45LL  
M5M5255DP, FP-55LL  
M5M5255DP, FP-70LL  
20µA  
(Vcc=5.5V)  
55mA  
(Vcc=5.5V)  
5µA  
M5M5255DP, FP-45XL  
M5M5255DP, FP-55XL  
M5M5255DP, FP-70XL  
45ns  
(Vcc=5.5V)  
55ns  
70ns  
0.05µA  
(Vcc=3.0V,  
Typical)  
•Single +5V power supply  
•No clocks, no refresh  
•Data-Hold on +2.0V power supply  
•Directly TTL compatible : all inputs and outputs  
•Three-state outputs : OR-tie capability  
•Simple memory expantion by /S1, S2  
•Common Data I/O  
•Battery backup capability  
•Low stand-by current··········0.05µA(typ.)  
PACKAGE  
M5M255DP  
M5M5255DFP  
: 28 pin 600 mil DIP  
: 28 pin 450 mil SOP  
APPLICATION  
Small capacity memory units  
MITSUBISHI  
ELECTRIC  
1

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