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M5M51R16AWG-10LI PDF预览

M5M51R16AWG-10LI

更新时间: 2024-11-28 22:05:59
品牌 Logo 应用领域
三菱 - MITSUBISHI 存储内存集成电路静态存储器
页数 文件大小 规格书
7页 91K
描述
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

M5M51R16AWG-10LI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA, BGA48,6X8,30
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:100 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8/2.7 V
认证状态:Not Qualified最大待机电流:0.000001 A
最小待机电流:1 V子类别:SRAMs
最大压摆率:0.025 mA最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

M5M51R16AWG-10LI 数据手册

 浏览型号M5M51R16AWG-10LI的Datasheet PDF文件第2页浏览型号M5M51R16AWG-10LI的Datasheet PDF文件第3页浏览型号M5M51R16AWG-10LI的Datasheet PDF文件第4页浏览型号M5M51R16AWG-10LI的Datasheet PDF文件第5页浏览型号M5M51R16AWG-10LI的Datasheet PDF文件第6页浏览型号M5M51R16AWG-10LI的Datasheet PDF文件第7页 
M5M51R16AWG -10LI, -12MLITI,SUB-I1S5HILLIS,Is  
-10HI, -12HI, -15HI  
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM  
PIN CONFIGURATION (TOP VIEW)  
DESCRIPTION  
The M5M51R16AWG is a 1048576-bit CMOS static RAM  
organized as 65536 words by 16-bits, which are fabricated using  
high-performance CMOS technology. The use of CMOS cells and  
periphery results in a high density and low power static RAM.  
The M5M51R16AWG can achieve low stand-by current and low  
operation current and ideal for the battery back-up application.  
The M5M51R16AWG is packaged in a 48-pin chip scale package  
which is a high reliability and high density surface mount device  
(SMD). Using this type of devices, it becomes very easy to design  
a small system.  
1
2
3
4
5
6
A
B
C
D
E
F
A3  
A2  
A6  
A7  
A0  
S
BC1 OE  
DQ16 BC2  
DQ14 DQ15  
NC  
DQ1  
DQ3  
A1  
DQ2  
A5  
The M5M51R16AWG is fully compatible with the M5M51R16WG.  
DQ13  
DQ12  
GND  
VCC  
A4  
DQ4 VCC  
DQ5 GND  
NC  
GND  
A9  
NC  
A14 DQ7 DQ6  
DQ11 DQ10  
DQ9 NC  
G
H
FEATURE  
A13  
A12  
DQ8  
NC  
A10  
A11  
W
Power supply current  
Access time  
A8  
A15  
NC  
Type name  
Active  
(max)  
Stand-by  
(max)  
(max)  
M5M51R16AWG- 10LI  
M5M51R16AWG- 12LI  
M5M51R16AWG- 15LI  
100ns  
120ns  
150ns  
4µA  
2µA  
10mA  
(1MHz)  
M5M51R16AWG- 10HI  
M5M51R16AWG- 12HI  
M5M51R16AWG- 15HI  
100ns  
120ns  
150ns  
PIN CONFIGURATION (BOTTOM VIEW)  
6
5
4
3
2
1
• Single +1.8V~2.7V power supply  
• Low power down current 0.05µA(typ.)  
• Directly TTL compatible : All inputs and outputs  
A
B
C
D
E
F
A3  
A2  
A0  
S
A6  
A7  
NC  
OE  
BC1  
• Easy memory expansion and power down by S,BC1 and BC2  
• Data hold on +1.0V power supply  
• Three-state outputs : OR-tie capability  
• OE prevents data contention in the I/O bus  
• Common data I/O  
DQ1  
DQ3  
BC2 DQ16  
DQ15 DQ14  
A1  
DQ2  
DQ4  
DQ5  
DQ7  
A5  
• Separate control of lower and upper bytes by BC1 and BC2  
• Package  
DQ13  
DQ12  
GND  
VCC  
VCC  
A4  
NC  
GND  
A9  
48-pin chip scale package(CSP)  
Ball pitch : 0.75mm  
Package size: 7.0mm x 8.5mm  
NC  
A14  
GND  
DQ6  
APPLICATION  
DQ10 DQ11  
Small capacity memory units.  
G
H
DQ8  
NC  
W
A13  
A12  
A10 NC  
DQ9  
NC  
A15  
A11  
A8  
Outline 48FJA  
NC : NO CONNECTION  
MITSUBISHI  
ELECTRIC  
Aug.1. 1998  
1

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