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M5M465400BJ-6S PDF预览

M5M465400BJ-6S

更新时间： 2024-11-20 22:46:39
品牌 Logo 应用领域
三菱 - MITSUBISHI 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
37页 361K
描述
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM

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中文翻译

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M5M465400BJ-6S 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOJ包装说明：SOJ, SOJ32,.44
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.02
风险等级：5.92Is Samacsys：N
访问模式：FAST PAGE最长访问时间：60 ns
其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESHI/O 类型：COMMON
JESD-30 代码：R-PDSO-J32JESD-609代码：e0
长度：20.95 mm内存密度：67108864 bit
内存集成电路类型：FAST PAGE DRAM内存宽度：4
功能数量：1端口数量：1
端子数量：32字数：16777216 words
字数代码：16000000最高工作温度：70 °C
最低工作温度：组织：16MX4
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：SOJ封装等效代码：SOJ32,.44
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3.3 V
认证状态：Not Qualified刷新周期：4096
座面最大高度：3.55 mm自我刷新：YES
最大待机电流：0.0003 A子类别：DRAMs
最大压摆率：0.12 mA标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：J BEND端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：10.16 mmBase Number Matches：1

M5M465400BJ-6S 数据手册

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(Rev. 1.1)  
MITSUBISHI LSIs  
M5M467400/465400BJ,BTP -5,-6,-5S,-6S  
M5M467800/465800BJ,BTP -5,-6,-5S,-6S  
M5M465160BJ,BTP -5,-6,-5S,-6S  
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM  
FAST PAGE MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM  
FAST PAGE MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM  
DESCRIPTION  
The M5M467400/465400BJ,BTP is organized 16777216-word by 4-bit, M5M467800/465800BJ,BTP is organized 8388608-word by  
8-bit, and M5M465160BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS  
process, and are suitable for large-capacity memory systems with high speed and low power dissipation.  
The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked  
capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system  
densities.  
FEATURES  
Address  
access access access  
time time time  
Power  
dissipa-  
tion  
RAS  
OE  
Power  
dissipa-  
tion  
CAS  
Cycle  
time  
Address  
access  
time  
RAS  
access access  
time time  
CAS  
OE  
Cycle  
time  
access  
time  
access  
time  
Type name  
Type name  
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW)  
(max.ns) (max.ns) (max.ns) (max.ns)  
(min.ns)  
(typ.mW)  
M5M467400BXX-5,5S  
M5M467800BXX-5,5S  
M5M465160BXX-5,5S  
M5M465160BXX-6,6S  
50  
60  
13  
15  
420  
90  
13  
15  
25  
30  
50  
60  
50  
60  
13  
15  
13  
15  
25  
30  
25  
30  
13  
15  
13  
15  
90  
110  
90  
300  
250  
390  
325  
M5M467400BXX-6,6S  
M5M467800BXX-6,6S  
390  
110  
M5M465400BXX-5,5S  
M5M465800BXX-5,5S  
M5M465400BXX-6,6S  
M5M465800BXX-6,6S  
110  
XX=J,TP  
(M5M467400Bxx/M5M465400Bxx/M5M467800Bxx/M5M465800Bxx)  
(M5M465160Bxx)  
Standard 32 pin SOJ, 32 pin TSOP  
Standard 50 pin SOJ, 50 pin TSOP  
±
Single 3.3 0.3V supply  
Low stand-by power dissipation  
1.8mW (Max)  
LVCMOS input level  
Low operating power dissipation  
M5M467400Bxx-5,5S / M5M467800Bxx-5,5S  
M5M467400Bxx-6,6S / M5M467800Bxx-6,6S  
M5M465400Bxx-5,5S / M5M465800Bxx-5,5S  
M5M465400Bxx-6,6S / M5M465800Bxx-6,6S  
M5M465160Bxx-5,5S  
360.0mW (Max)  
324.0mW (Max)  
468.0mW (Max)  
432.0mW (Max)  
504.0mW (Max)  
468.0mW (Max)  
M5M465160Bxx-6,6S  
Self refresh capability*  
Self refresh current  
400µA (Max)  
Fast-page mode , Read-modify-write, CAS before RAS refresh, Hidden refresh capabilities  
Early-write mode and OE to control output buffer impedance  
All inputs, outputs LVTTL compatible and low capacitance  
:Applicable to self refresh version(M5M467400/465400/467800/465800/465160BJ,BTP-5S,-6S:option) only  
*
ADDRESS  
Refresh Cycle  
Normal S-version  
8192/64ms 8192/128ms  
Row Add Col Add  
Refresh  
Part No.  
RAS Only Ref,Normal R/W  
CBR Ref,Hidden Ref  
M5M467400Bxx A0-A12 A0-A10  
4096/64ms  
4096/64ms  
4096/128ms  
4096/128ms  
RAS Only Ref,Normal R/W  
CBR Ref,Hidden Ref  
M5M465400Bxx  
A0-A11 A0-A11  
8192/64ms 8192/128ms  
RAS Only Ref,Normal R/W  
CBR Ref,Hidden Ref  
M5M467800Bxx A0-A12 A0-A9  
4096/64ms  
4096/64ms  
4096/128ms  
4096/128ms  
RAS Only Ref,Normal R/W  
CBR Ref,Hidden Ref  
M5M465800Bxx  
M5M465160Bxx  
A0-A10  
A0-A9  
A0-A11  
A0-A11  
RAS Only Ref,Normal R/W  
CBR Ref,Hidden Ref  
4096/128ms  
4096/64ms  
APPLICATION  
Main memory unit for computers, Microcomputer memory, Refresh memory for CRT  
Jun. 1999  
1
MITSUBISHI  
ELECTRIC  
1234567...37

中文翻译

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