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M5M256DP-55XL-I PDF预览

M5M256DP-55XL-I

更新时间: 2024-11-07 19:51:47
品牌 Logo 应用领域
三菱 - MITSUBISHI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
7页 44K
描述
Standard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28

M5M256DP-55XL-I 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:55 nsJESD-30 代码:R-PDIP-T28
长度:36.7 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:5.5 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:15.24 mmBase Number Matches:1

M5M256DP-55XL-I 数据手册

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'97.4.7  
MITSUBISHI LSIs  
M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I,  
-45XL-I,-55XL-I,-70XL-I  
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs  
organized as 32,768-words by 8-bits which is fabricated using  
high-performance 3 polysilicon CMOS technology. The use of  
resistive load NMOS cells and CMOS periphery results in a high  
density and low power static RAM. Stand-by current is small  
enough for battery back-up application. It is ideal for the memory  
systems which require simple interface.  
A14  
A12  
Vcc  
/W  
28  
27  
26  
25  
1
2
3
A7  
A6  
A5  
A4  
A13  
A8  
4
24 A9  
5
Especially the M5M5256DVP,RV are packaged in a 28-pin thin  
small outline package.Two types of devices are available,  
M5M5256DVP(normal lead bend type package),  
M5M5256DRV(reverse lead bend type package). Using both types of  
devices, it becomes very easy to design a printed circuit board.  
A11  
23  
6
22 /OE  
7
A3  
21  
20  
19  
A2  
A1  
A0  
DQ1  
DQ2  
8
9
A10  
/S  
DQ8  
10  
11  
12  
18 DQ7  
DQ6  
DQ5  
17  
16  
15  
FEATURE  
DQ3 13  
GND  
14  
Power supply current  
Active Stand-by  
Access  
time  
DQ4  
Type  
Outline 28P4 (DP)  
(max)  
45ns  
55ns  
70ns  
(max)  
(max)  
28P4Y (DKP)  
28P2W-C (DFP)  
M5M5256DP, KP, FP,VP,RV-45LL  
M5M5256DP, KP, FP,VP,RV-55LL  
M5M5256DP, KP, FP,VP,RV-70LL  
40µA  
(Vcc=5.5V)  
A10  
21  
20  
19  
22  
23  
24A9  
25A8  
26A13  
27  
/W  
28Vcc  
1
2
3
4 A6  
5 A5  
6 A4  
7 A3  
/OE  
A11  
/S  
DQ8  
55mA  
(Vcc=5.5V)  
10µA  
(Vcc=5.5V)  
DQ7 18  
DQ6 17  
DQ5 16  
DQ415  
GND  
DQ313  
DQ2  
DQ1  
A0  
M5M5256DP, KP, FP,VP,RV-45XL  
M5M5256DP, KP, FP,VP,RV-55XL  
M5M5256DP, KP, FP,VP,RV-70XL  
45ns  
55ns  
70ns  
0.05µA  
(Vcc=3.0V,  
Typical)  
M5M5256DVP  
- I  
14  
A14  
A12  
A7  
•Single +5V power supply  
•No clocks, no refresh  
•Data-Hold on +2.0V power supply  
•Directly TTL compatible : all inputs and outputs  
•Three-state outputs : OR-tie capability  
•/OE prevents data contention in the I/O bus  
•Common Data I/O  
12  
11  
10  
9
A1  
A2 8  
Outline 28P2C-A (DVP)  
•Battery backup capability  
A2  
A1  
A0  
•Low stand-by current··········0.05µA(typ.)  
A3  
A4  
A5  
8
9
10  
7
6
5
4 A6  
DQ111  
PACKAGE  
DQ2  
DQ3  
GND  
DQ4  
DQ5  
DQ6  
3 A7  
2 A12  
1 A14  
12  
13  
M5M256DP  
M5M5256DKP  
M5M5256DFP  
: 28 pin 600 mil DIP  
: 28 pin 300 mil DIP  
14  
15  
16  
17  
18  
19  
M5M5256DRV  
- I  
Vcc  
28  
: 28 pin 450 mil SOP  
2
27 /W  
26 A13  
25 A8  
M5M5256DVP,RV : 28pin 8 X 13.4 mm TSOP  
DQ7  
DQ8  
/S 20  
A10  
APPLICATION  
A9  
A11  
/OE  
24  
23  
22  
Small capacity memory units  
21  
Outline 28P2C-B (DRV)  
MITSUBISHI  
ELECTRIC  
1

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