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M5KP30CAE3 PDF预览

M5KP30CAE3

更新时间: 2024-11-12 18:15:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
7页 354K
描述
Trans Voltage Suppressor Diode, 5000W, 30V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AR, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN

M5KP30CAE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.35
其他特性:HIGH RELIABILITY最大击穿电压:36.8 V
最小击穿电压:33.3 V击穿电压标称值:35.05 V
外壳连接:ISOLATED最大钳位电压:53.5 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-204AR
JESD-30 代码:R-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:5000 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:1.56 W
认证状态:Not Qualified参考标准:MIL-19500
最大重复峰值反向电压:30 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

M5KP30CAE3 数据手册

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