5秒后页面跳转
M59DR032B100N1T PDF预览

M59DR032B100N1T

更新时间: 2024-11-12 22:24:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
38页 271K
描述
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

M59DR032B100N1T 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.28最长访问时间:100 ns
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:4 words并行/串行:PARALLEL
电源:1.8/2 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:4K,32K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.04 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M59DR032B100N1T 数据手册

 浏览型号M59DR032B100N1T的Datasheet PDF文件第2页浏览型号M59DR032B100N1T的Datasheet PDF文件第3页浏览型号M59DR032B100N1T的Datasheet PDF文件第4页浏览型号M59DR032B100N1T的Datasheet PDF文件第5页浏览型号M59DR032B100N1T的Datasheet PDF文件第6页浏览型号M59DR032B100N1T的Datasheet PDF文件第7页 
M59DR032A  
M59DR032B  
32 Mbit (2Mb x16, Dual Bank, Page) Low Voltage Flash Memory  
PRELIMINARY DATA  
SUPPLY VOLTAGE  
– V  
= V  
= 1.65V to 2.2V: for Program,  
DDQ  
DD  
Erase and Read  
– V  
= 12V: optional Supply Voltage for fast  
PP  
Program and Erase  
ASYNCHRONOUS PAGE MODE READ  
– Page Width: 4 words  
BGA  
– Page Access: 35ns  
– Random Access: 100ns  
TSOP48 (N)  
12 x 20mm  
FBGA48 (ZB)  
8 x 6 solder balls  
PROGRAMMING TIME  
– 10µs by Word typical  
– Double Word Programming Option  
MEMORY BLOCKS  
– Dual Bank Memory Array: 4 Mbit - 28 Mbit  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
Figure 1. Logic Diagram  
DUAL BANK OPERATIONS  
– Read within one Bank while Program or  
Erase within the other  
V
V
V
DD DDQ PP  
– No delay between Read and Write operations  
BLOCK PROTECTION/UNPROTECTION  
– All Blocks protected at Power Up  
21  
16  
A0-A20  
DQ0-DQ15  
– Any combination of Blocks can be protected  
– WP for Block Locking  
W
E
M59DR032A  
M59DR032B  
COMMON FLASH INTERFACE (CFI)  
64 bit SECURITY CODE  
G
RP  
WP  
ERASE SUSPEND and RESUME MODES  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
V
SS  
AI02544B  
– Device Code, M59DR032A: A0h  
– Device Code, M59DR032B: A1h  
October 1999  
1/38  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

与M59DR032B100N1T相关器件

型号 品牌 获取价格 描述 数据表
M59DR032B100N6 NUMONYX

获取价格

Flash, 2MX16, 100ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M59DR032B100N6T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032B100N6T NUMONYX

获取价格

Flash, 2MX16, 100ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M59DR032B100ZB1 STMICROELECTRONICS

获取价格

2MX16 FLASH 1.8V PROM, 100ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M59DR032B100ZB1 NUMONYX

获取价格

Flash, 2MX16, 100ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M59DR032B100ZB1T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032B100ZB6 STMICROELECTRONICS

获取价格

2MX16 FLASH 1.8V PROM, 100ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M59DR032B100ZB6T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032B120N1T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032B120N1T NUMONYX

获取价格

Flash, 2MX16, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48