Datasheet > M59DR008F120N6

M59DR008F120N6

更新时间： 2024-09-25 20:33:15

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器光电二极管内存集成电路闪存
页数	文件大小	规格书
38页	270K
描述
512KX16 FLASH 1.8V PROM, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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M59DR008F120N6 数据手册

M59DR008E

M59DR008F

8 Mbit (512Kb x16, Dual Bank, Page)

1.8V Supply Flash Memory

■ SUPPLY VOLTAGE

– V = V = 1.65V to 2.2V for Program,

DDQ

Erase and Read

– V = 12V for fast Program (optional)

■ ASYNCHRONOUS PAGE MODE READ

– Page Width: 4 words

BGA

– Page Access: 35ns

– Random Access: 100ns

TSOP48 (N)

12 x 20mm

TFBGA48 (ZB)

8 x 6 balls array

■ PROGRAMMING TIME

– 10µs by Word typical

– Double Word Programming Option

■ MEMORY BLOCKS

– Dual Bank Memory Array: 4 Mbit - 4 Mbit

– Parameter Blocks (Top or Bottom location)

■ DUAL BANK OPERATIONS

Figure 1. Logic Diagram

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

■ BLOCK PROTECTION/UNPROTECTION

– All Blocks protected at Power Up

DD DDQ PP

– Any combination of Blocks can be protected

■ COMMON FLASH INTERFACE (CFI)

■ 64 bit SECURITY CODE

A0-A18

DQ0-DQ15

■ ERASE SUSPEND and RESUME MODES

M59DR008E

M59DR008F

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M59DR008E: A2h

– Bottom Device Code, M59DR008F: A3h

AI03212

March 2001

1/38

12 3 4 5 6 7...38

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