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M59DR016C100ZB1T PDF预览

M59DR016C100ZB1T

更新时间: 2024-09-24 22:34:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
37页 241K
描述
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

M59DR016C100ZB1T 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:BGA包装说明:0.75 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.4Is Samacsys:N
最长访问时间:100 ns启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B48
JESD-609代码:e1长度:12 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,31端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH页面大小:4 words
并行/串行:PARALLEL电源:1.8/2 V
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:1.35 mm部门规模:4K,32K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.04 mA最大供电电压 (Vsup):2.2 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM切换位:YES
类型:NOR TYPE宽度:7 mm
Base Number Matches:1

M59DR016C100ZB1T 数据手册

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M59DR016C  
M59DR016D  
16 Mbit (1Mb x16, Dual Bank, Page)  
1.8V Supply Flash Memory  
PRODUCT PREVIEW  
SUPPLY VOLTAGE  
– V = V = 1.65V to 2.2V for Program,  
DD  
DDQ  
Erase and Read  
– V = 12V for fast Program (optional)  
PP  
ASYNCHRONOUS PAGE MODE READ  
– Page Width: 4 words  
BGA  
– Page Access: 35ns  
– Random Access: 100ns  
TFBGA48 (ZB)  
8 x 6 balls array  
PROGRAMMING TIME  
– 10µs by Word typical  
– Double Word Programming Option  
MEMORY BLOCKS  
– Dual Bank Memory Array: 4 Mbit - 12 Mbit  
– Parameter Blocks (Top or Bottom location)  
Figure 1. Logic Diagram  
DUAL BANK OPERATIONS  
– Read within one Bank while Program or  
Erase within the other  
– No delay between Read and Write operations  
BLOCK PROTECTION/UNPROTECTION  
– All Blocks protected at Power Up  
V
V
V
DD DDQ PP  
20  
16  
– Any combination of Blocks can be protected  
COMMON FLASH INTERFACE (CFI)  
64 bit SECURITY CODE  
A0-A19  
DQ0-DQ15  
W
E
ERASE SUSPEND and RESUME MODES  
M59DR016C  
M59DR016D  
100,000 PROGRAM/ERASE CYCLES per  
G
BLOCK  
RP  
WP  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M59DR016C: 2293h  
– Bottom Device Code, M59DR016D: 2294h  
V
SS  
AI04106  
March 2001  
1/37  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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