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M59DR008F120ZB6T PDF预览

M59DR008F120ZB6T

更新时间: 2024-09-24 22:25:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
37页 268K
描述
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

M59DR008F120ZB6T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:0.75 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.75Is Samacsys:N
最长访问时间:120 ns启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:S-PBGA-B48
JESD-609代码:e1长度:7 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,15端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装等效代码:BGA48,6X8,30封装形状:SQUARE
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH页面大小:4 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8/2 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1.35 mm
部门规模:4K,32K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.04 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:7 mm
Base Number Matches:1

M59DR008F120ZB6T 数据手册

 浏览型号M59DR008F120ZB6T的Datasheet PDF文件第2页浏览型号M59DR008F120ZB6T的Datasheet PDF文件第3页浏览型号M59DR008F120ZB6T的Datasheet PDF文件第4页浏览型号M59DR008F120ZB6T的Datasheet PDF文件第5页浏览型号M59DR008F120ZB6T的Datasheet PDF文件第6页浏览型号M59DR008F120ZB6T的Datasheet PDF文件第7页 
M59DR008E  
M59DR008F  
8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory  
PRODUCT PREVIEW  
SUPPLY VOLTAGE  
– V  
= V  
= 1.65V to 2.2V: for Program,  
DDQ  
DD  
Erase and Read  
– V  
= 12V: optional Supply Voltage for fast  
PP  
Program and Erase  
ASYNCHRONOUS PAGE MODE READ  
– Page Width: 4 words  
BGA  
– Page Access: 35ns  
– Random Access: 100ns  
TSOP48 (N)  
12 x 20mm  
FBGA48 (ZB)  
8 x 6 solder balls  
PROGRAMMING TIME  
– 10µs by Word typical  
– Double Word Programming Option  
MEMORY BLOCKS  
– Dual Bank Memory Array: 4 Mbit - 4 Mbit  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
Figure 1. Logic Diagram  
DUAL BANK OPERATIONS  
– Read within one Bank while Program or  
Erase within the other  
V
V
V
DD DDQ PP  
– No delay between Read and Write operations  
BLOCK PROTECTION/UNPROTECTION  
– All Blocks protected at Power Up  
19  
16  
A0-A18  
DQ0-DQ15  
– Any combination of Blocks can be protected  
– WP for Block Locking  
W
E
M59DR008E  
M59DR008F  
COMMON FLASH INTERFACE (CFI)  
64 bit SECURITY CODE  
G
RP  
WP  
ERASE SUSPEND and RESUME MODES  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
V
SS  
AI03212  
– Device Code, M59DR008E: A2h  
– Device Code, M59DR008F: A3h  
October 1999  
1/37  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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