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M3770ZV300 PDF预览

M3770ZV300

更新时间: 2024-11-05 21:02:19
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
12页 683K
描述
Rectifier Diode,

M3770ZV300 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.68Base Number Matches:1

M3770ZV300 数据手册

 浏览型号M3770ZV300的Datasheet PDF文件第2页浏览型号M3770ZV300的Datasheet PDF文件第3页浏览型号M3770ZV300的Datasheet PDF文件第4页浏览型号M3770ZV300的Datasheet PDF文件第5页浏览型号M3770ZV300的Datasheet PDF文件第6页浏览型号M3770ZV300的Datasheet PDF文件第7页 
Date:- 15 Oct, 2014  
Data Sheet Issue:- 2  
Fast Recovery Diode  
Type M3770Z#200 to M3770Z#300  
Old Type No.: SM20-30CXC974  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VRRM  
VRSM  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
2000-3000  
V
V
2100-3100  
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IF(AV)M  
IF(AV)M  
IF(AV)M  
IF(RMS)  
IF(d.c.)  
IFSM  
Maximum average forward current, Tsink=55°C, (note 2)  
Maximum average forward current. Tsink=100°C, (note 2)  
Maximum average forward current. Tsink=100°C, (note 3)  
Nominal RMS forward current, Tsink=25°C, (note 2)  
D.C. forward current, Tsink=25°C, (note 4)  
3770  
A
A
2402  
1416  
A
7109  
A
5991  
A
Peak non-repetitive surge tp=10ms, VRM=60% VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=60% VRRM, (note 5)  
I2t capacity for fusing tp=10ms, VRM10V, (note 5)  
Operating temperature range  
44.0  
kA  
kA  
A2s  
A2s  
°C  
°C  
IFSM2  
I2t  
48.4  
9.68 × 106  
11.7 × 106  
-40 to +150  
-55 to +150  
I2t  
Tj op  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 150°C Tj initial.  
Data Sheet. Types M3770Z#200 to M3770Z#300 Issue 2  
Page 1 of 11  
October 2014  

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