Datasheet > M368L2923BTM-CC4

M368L2923BTM-CC4

更新时间： 2023-01-02 16:23:29

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器双倍数据速率
页数	文件大小	规格书
23页	359K
描述
DDR DRAM Module, 128MX64, 0.65ns, CMOS, DIMM-184

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数据手册

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M368L2923BTM-CC4 数据手册

256MB, 512MB, 1GB Unbuffered DIMM

DDR SDRAM

184Pin Unbuffered DIMM based on 512Mb B-die (x8/x16)

Ordering Information

Part Number

Density

256MB

512MB

1GB

Organization

32M x 64

Component Composition

Height

M368L3324BTM-C(L)CC/C4

M368L6523BTM-C(L)CC/C4

M381L6523BTM-C(L)CC/C4

M368L2923BTM-C(L)CC/C4

M381L2923BTM-C(L)CC/C4

32Mx16( K4H511638B) * 4EA

64Mx8( K4H510838B) * 8EA

64Mx8( K4H510838B) * 9EA

64Mx8( K4H510838B) * 16EA

64Mx8( K4H510838B) * 18EA

1.250(mil)

64M x 64

64M x 72

128M x 64

128M x 72

1GB

Operating Frequencies

CC(DDR400@CL=3)

200MHz

C4(DDR400@CL=3)

Speed @CL3

CL-tRCD-tRP

200MHz

3-4-4

3-3-3

Feature

• Power supply : Vdd: 2.6V ± 0.1V, Vddq: 2.6V ± 0.1V

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

• Programmable Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333

• Programmable Burst length (2, 4, 8)

• Programmable Burst type (sequential & interleave)

• Edge aligned data output, center aligned data input

• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)

• Serial presence detect with EEPROM

• PCB : Height 1,250 (mil), single (256MB,512MB) and double(1GB) sided

• SSTL_2 Interface

SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.

Rev. 1.2 November 2004

1 234 5 6 7...23

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与M368L2923BTM-CC4相关器件

型号	品牌	描述	获取价格	数据表
M368L2923BTM-CCC	SAMSUNG	DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit N	获取价格
M368L2923BTM-LCC	SAMSUNG	DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit N	获取价格
M368L2923BTN-CB3	SAMSUNG	DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit N	获取价格
M368L2923BTN-LB3	SAMSUNG	DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit N	获取价格
M368L2923BUM-CC4	SAMSUNG	DDR DRAM Module, 128MX64, 0.65ns, CMOS, DIMM-184	获取价格
M368L2923BUM-CCC	SAMSUNG	DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit N	获取价格