Datasheet > M29W641DL12ZA1T

M29W641DL12ZA1T

更新时间： 2024-11-28 22:08:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
42页	625K
描述
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory

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M29W641DL12ZA1T 数据手册

M29W641DH, M29W641DL

M29W641DU

64 Mbit (4Mb x16, Uniform Block)

3V Supply Flash Memory

PRODUCT PREVIEW

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 2.7V to 3.6V Core Power Supply

– V

= 1.8V to 3.6V for Input/Output

CCQ

– V =12 V for Fast Program (optional)

■ ACCESS TIME: 70, 90, 100 and 120ns

■ PROGRAMMING TIME

– 10 µs typical

– Double Word Program option

■ 128 UNIFORM, 32-KWord MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Program and Erase algorithms

■ ERASE SUSPEND and RESUME MODES

TSOP48 (N)

12 x 20mm

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ WRITE PROTECT OPTIONS

FBGA

– M29W641DH: WP Pin for Write Protection of

Highest Address Block

– M29W641DL: WP Pin for Write Protection of

Lowest Address Block

TFBGA63 (ZA)

7 x 11mm

– M29W641DU: No Write Protection

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ COMMON FLASH INTERFACE

■ EXTENDED MEMORY BLOCK

– Extra block used as security block or to store

additional information

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M29W641D: 22C7h

April 2003

1/42

This is preliminary information on a new product now in development. Details are subject to change without notice.

12 3 4 5 6 7...42

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