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M29W641DL90N6T PDF预览

M29W641DL90N6T

更新时间: 2024-11-28 22:56:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
42页 625K
描述
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory

M29W641DL90N6T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:12 X 20 MM, PLASTIC, TSOP-48针数:48
Reach Compliance Code:not_compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.84
最长访问时间:90 ns启动块:BOTTOM/TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:128端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:32K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29W641DL90N6T 数据手册

 浏览型号M29W641DL90N6T的Datasheet PDF文件第2页浏览型号M29W641DL90N6T的Datasheet PDF文件第3页浏览型号M29W641DL90N6T的Datasheet PDF文件第4页浏览型号M29W641DL90N6T的Datasheet PDF文件第5页浏览型号M29W641DL90N6T的Datasheet PDF文件第6页浏览型号M29W641DL90N6T的Datasheet PDF文件第7页 
M29W641DH, M29W641DL  
M29W641DU  
64 Mbit (4Mb x16, Uniform Block)  
3V Supply Flash Memory  
PRODUCT PREVIEW  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V Core Power Supply  
CC  
– V  
= 1.8V to 3.6V for Input/Output  
CCQ  
– V =12 V for Fast Program (optional)  
PP  
ACCESS TIME: 70, 90, 100 and 120ns  
PROGRAMMING TIME  
– 10 µs typical  
– Double Word Program option  
128 UNIFORM, 32-KWord MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
– Embedded Program and Erase algorithms  
ERASE SUSPEND and RESUME MODES  
TSOP48 (N)  
12 x 20mm  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
WRITE PROTECT OPTIONS  
FBGA  
– M29W641DH: WP Pin for Write Protection of  
Highest Address Block  
– M29W641DL: WP Pin for Write Protection of  
Lowest Address Block  
TFBGA63 (ZA)  
7 x 11mm  
– M29W641DU: No Write Protection  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
EXTENDED MEMORY BLOCK  
– Extra block used as security block or to store  
additional information  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code M29W641D: 22C7h  
April 2003  
1/42  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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