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M29W160ET70ZA6F PDF预览

M29W160ET70ZA6F

更新时间: 2024-11-08 15:17:15
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
47页 640K
描述
16Mb (2Mb x8 or 1Mb x16), 3V, Boot Block, Parallel NOR Flash Memory

M29W160ET70ZA6F 数据手册

 浏览型号M29W160ET70ZA6F的Datasheet PDF文件第2页浏览型号M29W160ET70ZA6F的Datasheet PDF文件第3页浏览型号M29W160ET70ZA6F的Datasheet PDF文件第4页浏览型号M29W160ET70ZA6F的Datasheet PDF文件第5页浏览型号M29W160ET70ZA6F的Datasheet PDF文件第6页浏览型号M29W160ET70ZA6F的Datasheet PDF文件第7页 
16Mb: 3V Embedded Parallel NOR Flash  
Features  
Parallel NOR Flash Embedded Memory  
M29W160ET, M29W160EB  
• Common Flash interface  
– 64-bit security code  
• Low power consumption: Standby and automatic  
mode  
• 100,000 PROGRAM/ERASE cycles per block  
• Electronic signature  
Features  
• Supply voltage  
– VCC = 2.7–3.6V (program, erase, read)  
• Access times  
– 70, 90ns  
• Program time  
– 10µs per byte/word (TYP)  
• Memory organization  
– 3 parameter and 31 main blocks  
– 1 boot block (top or bottom location)  
• Program/erase controller  
– Embedded byte/word program algorithms  
• Erase suspend and resume capability  
– Read or program another block during an ERASE  
SUSPEND operation  
– Manufacturer code: 0020h  
Top device code M29W160ET: 22C4h  
– Bottom device code M29W160EB: 2249h  
• Packages  
– 48-pin TSOP (N) 12mm x 20mm  
– 48-ball TFBGA (ZA) 6mm x 8mm  
– 64-ball FBGA (ZS) 11mm x 13mm  
• Automotive grade parts available  
• UNLOCK BYPASS PROGRAM COMMAND  
– Fast buffered/batch programming  
Temporary block unprotect mode  
PDF: 09005aef84e1488c  
m29W_160e.pdf - Rev. C 02/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2012 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

M29W160ET70ZA6F 替代型号

型号 品牌 替代类型 描述 数据表
M29W160ET7AZA6F MICRON

功能相似

16Mb (2Mb x8 or 1Mb x16), 3V, Boot Block, Parallel NOR Flash Memory
M29W160ET70ZA6 STMICROELECTRONICS

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16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

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