M29KW064E90N1

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M29KW064E90N1 数据手册

M29KW064E

64 Mbit (4Mb x16, Uniform Block)

3V Supply LightFlash™ Memory

PRODUCT PREVIEW

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 2.7V to 3.6V for Read

– V = 11.4V to 12.6V for Program and Erase

■ ACCESS TIME: 90, 110ns

■ PROGRAMMING TIME

– 9µs per Word typical

– Multiple Word Programming Option (8s

typical Chip Program)

TSOP48 (N)

12 x 20mm

■ ERASE TIME

– 41s typical factory Chip Erase

■ UNIFORM BLOCKS

FBGA

– 32 blocks of 2 Mbits

■ PROGRAM/ERASE CONTROLLER

– Embedded Word Program algorithms

TFBGA48 (ZA)

6 x 9mm

■ 10,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code : 88AFh

July 2002

1/30

This is preliminary information on a new product now in development. Details are subject to change without notice.

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型号	品牌	获取价格	描述	数据表
M29KW064E90N1T	STMICROELECTRONICS	获取价格	64 Mbit 4Mb x16, Uniform Block 3V Supply Ligh
M29KW064E90ZA1	STMICROELECTRONICS	获取价格	暂无描述
M29KW064E90ZA1T	STMICROELECTRONICS	获取价格	64 Mbit 4Mb x16, Uniform Block 3V Supply Ligh
M29LV002BT-55REC	SPANSION	获取价格	Flash, 256KX8, 55ns, PDSO40, MO-142BCD, TSOP-40
M29LV002BT-55REF	SPANSION	获取价格	Flash, 256KX8, 55ns, PDSO40, LEAD FREE, MO-142BCD, TSOP-40
M29LV002BT-55RFC	SPANSION	获取价格	Flash, 256KX8, 55ns, PDSO40, REVERSE, MO-142CD, TSOP-40
M29LV800B	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
M29R008B-100N1	STMICROELECTRONICS	获取价格	Flash, 1MX8, 100ns, PDSO40, 10 X 20 MM, TSOP-40
M29R008B-100N5	STMICROELECTRONICS	获取价格	1MX8 FLASH 3V PROM, 100ns, PDSO40, 10 X 20 MM, TSOP-40
M29R008B-100N6	STMICROELECTRONICS	获取价格	Flash, 1MX8, 100ns, PDSO40, 10 X 20 MM, TSOP-40