Datasheet > M29LV800B

M29LV800B

更新时间： 2024-11-26 22:40:59

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
42页	535K
描述
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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M29LV800B 数据手册

PRELIMINARY

Am29LV800B

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Unlock Bypass Program Command

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Reduces overall programming time when

issuing multiple program command sequences

— Regulated voltage range: 3.0 to 3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

■ Manufactured on 0.35 µm process technology

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Compatible with 0.5 µm Am29LV800 device

■ High performance

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— Full voltage range: access times as fast as 80 ns

— Regulated voltage range: access times as fast

as 70 ns

■ Minimum 1,000,000 write cycle guarantee per

sector

■ Ultra low power consumption (typical values at

■ Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

— Superior inadvertent write protection

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

— Supports full chip erase

— Sector Protection features:

■ Ready/Busy# pin (RY/BY#)

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

Sectors can be locked in-system or via

programming equipment

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 21490 Rev: E Amendment/+1

Issue Date: March 1998

Refer to AMD’s Website (www.amd.com) for the latest information.

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与M29LV800B相关器件

型号	品牌	获取价格	描述	数据表
M29R008B-100N1	STMICROELECTRONICS	获取价格	Flash, 1MX8, 100ns, PDSO40, 10 X 20 MM, TSOP-40
M29R008B-100N5	STMICROELECTRONICS	获取价格	1MX8 FLASH 3V PROM, 100ns, PDSO40, 10 X 20 MM, TSOP-40
M29R008B-100N6	STMICROELECTRONICS	获取价格	Flash, 1MX8, 100ns, PDSO40, 10 X 20 MM, TSOP-40
M29R008B-100N6TR	STMICROELECTRONICS	获取价格	1MX8 FLASH 3V PROM, 100ns, PDSO40, 10 X 20 MM, TSOP-40
M29R008B-120N1	STMICROELECTRONICS	获取价格	Flash, 1MX8, 120ns, PDSO40, 10 X 20 MM, TSOP-40
M29R008B-120N5	STMICROELECTRONICS	获取价格	Flash, 1MX8, 120ns, PDSO40, 10 X 20 MM, TSOP-40
M29R008B-120N5TR	STMICROELECTRONICS	获取价格	暂无描述
M29R008B-120N6	STMICROELECTRONICS	获取价格	Flash, 1MX8, 120ns, PDSO40, 10 X 20 MM, TSOP-40
M29R008B-120N6TR	STMICROELECTRONICS	获取价格	1MX8 FLASH 3V PROM, 120ns, PDSO40, 10 X 20 MM, TSOP-40
M29R008B-150N1TR	STMICROELECTRONICS	获取价格	Flash, 1MX8, 150ns, PDSO40, 10 X 20 MM, TSOP-40

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