Datasheet > M29F800DT

M29F800DT

更新时间： 2024-11-03 22:55:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
39页	254K
描述
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

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M29F800DT 数据手册

M29F800DT

M29F800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

5V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 5V ±10% for Program, Erase and Read

■ ACCESS TIME: 55, 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 19 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 16 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithms

■ ERASE SUSPEND and RESUME MODES

SO44 (M)

– Read and Program another Block during

Erase Suspend

TSOP48 (N)

12 x 20mm

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29F800DT: 22ECh

– Bottom Device Code M29F800DB: 2258h

February 2003

1/39

12 3 4 5 6 7...39

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