Datasheet > M29F200T-70N3R

M29F200T-70N3R

更新时间： 2024-11-01 22:55:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
33页	227K
描述
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

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数据手册

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M29F200T-70N3R 数据手册

M29F200T

M29F200B

2 Mbit (256Kb x8 or 128Kb x16, Boot Block)

Single Supply Flash Memory

5V±10% SUPPLYVOLTAGEfor PROGRAM,

ERASE and READ OPERATIONS

FASTACCESS TIME: 55ns

FAST PROGRAMMING TIME

– 10 s by Byte / 16 s by Word typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameterand Main blocks

TSOP48 (N)

12 x 20 mm

SO44 (M)

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI-BLOCKPROTECTION/TEMPORARY

UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

LOW POWER CONSUMPTION

– Stand-byand AutomaticStand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARSDATARETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– ManufacturerCode: 0020h

– Device Code, M29F200T: 00D3h

– Device Code, M29F200B: 00D4h

A0-A16

DQ0-DQ14

DQ15A–1

BYTE

M29F200T

M29F200B

DESCRIPTION

The M29F200 is a non-volatile memory that may

be erased electrically at the block or chiplevel and

programmedin-systemona Byte-by-Byteor Word-

by-Word basis using only a single 5V V_CCsupply.

For Program and Erase operations the necessary

high voltages are generatedinternally. The device

can also be programmed in standard program-

mers.

The array matrix organisationallows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protectedagainst pro-

graming and erase on programming equipment,

and temporarily unprotected to make changes in

the application.

AI01986

July 1998

1/33

12 3 4 5 6 7...33

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