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M29F200 PDF预览

M29F200

更新时间: 2024-11-09 22:25:55
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
22页 147K
描述
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

M29F200 数据手册

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M29F200BT  
M29F200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8µs per Byte/Word typical  
44  
7 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 4 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
V
CC  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
17  
15  
MODE  
A0-A16  
DQ0-DQ14  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
W
DQ15A–1  
BYTE  
RB  
100,000 PROGRAM/ERASE CYCLES per  
M29F200BT  
M29F200BB  
E
G
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
RP  
– M29F200BT Device Code: 00D3h  
– M29F200BB Device Code: 00D4h  
V
SS  
AI02912  
October 1999  
1/22  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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