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M29F100BB120N1T PDF预览

M29F100BB120N1T

更新时间: 2024-11-04 05:23:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
22页 148K
描述
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory

M29F100BB120N1T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.77最长访问时间:70 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,1端子数量:48
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29F100BB120N1T 数据手册

 浏览型号M29F100BB120N1T的Datasheet PDF文件第2页浏览型号M29F100BB120N1T的Datasheet PDF文件第3页浏览型号M29F100BB120N1T的Datasheet PDF文件第4页浏览型号M29F100BB120N1T的Datasheet PDF文件第5页浏览型号M29F100BB120N1T的Datasheet PDF文件第6页浏览型号M29F100BB120N1T的Datasheet PDF文件第7页 
M29F100BT  
M29F100BB  
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)  
Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8µs per Byte/Word typical  
44  
5 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 2 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
V
CC  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
16  
15  
MODE  
A0-A15  
DQ0-DQ14  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
W
DQ15A–1  
BYTE  
RB  
100,000 PROGRAM/ERASE CYCLES per  
M29F100BT  
M29F100BB  
E
G
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
RP  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code M29F100BT: 00D0h  
– Bottom Device Code M29F100BB: 00D1h  
V
SS  
AI02916  
July 2000  
1/22  

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