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M29F010B70P3T PDF预览

M29F010B70P3T

更新时间: 2024-10-31 22:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
20页 405K
描述
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory

M29F010B70P3T 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:0.600 INCH, PLASTIC, DIP-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.57
最长访问时间:70 nsJESD-30 代码:R-PDIP-T32
长度:41.91 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified座面最大高度:5.08 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:AUTOMOTIVE
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL类型:NOR TYPE
宽度:15.24 mmBase Number Matches:1

M29F010B70P3T 数据手册

 浏览型号M29F010B70P3T的Datasheet PDF文件第2页浏览型号M29F010B70P3T的Datasheet PDF文件第3页浏览型号M29F010B70P3T的Datasheet PDF文件第4页浏览型号M29F010B70P3T的Datasheet PDF文件第5页浏览型号M29F010B70P3T的Datasheet PDF文件第6页浏览型号M29F010B70P3T的Datasheet PDF文件第7页 
M29F010B  
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45 ns  
PROGRAMMING TIME  
– 8 µs per Byte typical  
8 UNIFORM 16 KBytes MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
V
CC  
– Standby and Automatic Standby  
17  
8
100,000 PROGRAM/ERASE CYCLES per  
A0-A16  
DQ0-DQ7  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
W
E
M29F010B  
G
– Device Code: 20h  
ECOPACK® PACKAGES AVAILABLE  
V
SS  
AI02735  
September 2005  
1/20  

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