Datasheet > M29F002NT-70P1

M29F002NT-70P1

更新时间： 2024-02-13 21:34:08

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器光电二极管内存集成电路
页数	文件大小	规格书
29页	233K
描述
256KX8 FLASH 5V PROM, 70ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32

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数据手册

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M29F002NT-70P1 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	DIP	包装说明：	DIP, DIP32,.6
针数：	32	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.28	最长访问时间：	70 ns
其他特性：	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK	启动块：	TOP
命令用户界面：	YES	数据轮询：	YES
数据保留时间-最小值：	20	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDIP-T32	JESD-609代码：	e0
长度：	41.91 mm	内存密度：	2097152 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	部门数/规模：	1,2,1,3
端子数量：	32	字数：	262144 words
字数代码：	256000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	256KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装等效代码：	DIP32,.6
封装形状：	RECTANGULAR	封装形式：	IN-LINE
并行/串行：	PARALLEL	电源：	5 V
编程电压：	5 V	认证状态：	Not Qualified
座面最大高度：	5.08 mm	部门规模：	16K,8K,32K,64K
最大待机电流：	0.0001 A	子类别：	Flash Memories
最大压摆率：	0.02 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	NO	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	切换位：	YES
类型：	NOR TYPE	宽度：	15.24 mm
Base Number Matches：	1

M29F002NT-70P1 数据手册

M29F002T, M29F002NT, M29F002B

Write. Write operations are used to give Instruction

Commands to the memory or to latch input data to

be programmed.A write operation is initiated when

Chip Enable E is Low and Write Enable W is Low

with Output Enable G High. Addresses are latched

on the falling edge of W or E whichever occurs last.

Commands and InputData are latched on the rising

edge of W or E whichever occurs first.

protected in order to change stored data. The tem-

porary unprotection mode is activated by bringing

RPNC to V_ID. During the temporary unprotection

mode the previously protected blocks are unpro-

tected. A block can be selected and data can be

modified by executing the Erase or Program in-

struction with the RPNC signal held at V_ID. When

RPNC is returned to V_IH, all the previously pro-

tected blocks are again protected.

Block Unprotection. All protected blocks can be

unprotected on programming equipment to allow

updating of bit contents. All blocks must first be

protected before the unprotection operation. Block

unprotection is activated when A9, G and E are at

V_IDand A12, A15 at V_IH. The Block Unprotection

algorithm is shown in Figure 15. Unprotection is

initiated by the edge of W falling to V_IL.After a delay

of 10ms, the unprotection operation is ended by

rising W to V_IH. Unprotection verify is achieved by

bringing G and E to V_ILwhile A0 is at V_IL, A6 and

A1 are at V_IHand A9 remains at V_ID. In these

conditions, reading the output data will yield 00h if

the block defined by the inputs A13-A17 has been

succesfully unprotected. Each block must be sepa-

rately verified by giving its address in order to

ensure that it has been unprotected.

Output Disable. The data outputs are high imped-

ance when the Output Enable G is High with Write

Enable W High.

Standby. The memory is in standby when Chip

Enable E is High and the P/E.C. is idle. The power

consumption is reduced to the standby level and

the outputsare high impedance, independentofthe

Output Enable G or Write Enable W inputs.

Automatic Standby. After 150ns of bus inactivity

and when CMOS levels are driving the addresses,

the chip automatically enters a pseudo-standby

mode where consumption is reduced to the CMOS

standby value, while outputs still drive the bus.

Electronic Signature. Two codes identifying the

manufacturer and the device can be read from the

memory. These codes allow programming equip-

ment or applications to automatically match their

interface to the characteristics of the M29F002.The

Electronic Signature is output by a Read operation

when the voltage applied toA9is atV_IDand address

input A1 is Low. The manufacturer code is output

when the Address input A0 is Low and the device

code when this input is High. Other Address inputs

are ignored.

INSTRUCTIONS AND COMMANDS

The Command Interface latchescommands written

to the memory. Instructions are made up from one

or more commands to perform Read MemoryArray,

Read Electronic Signature, Read Block Protection,

Program, Block Erase, Chip Erase, Erase Suspend

and Erase Resume. Commands are made of ad-

dress and data sequences.

The Electronic Signature can also be read, without

raising A9 to V_ID, by giving the memory the Instruc-

tion AS.

Block Protection. Each block can be separately

protected against Program or Erase on program-

ming equipment. Block protection provides addi-

tional data security, as it disables all program or

erase operations.This mode is activated when both

A9 and G are raised to V_IDand an address in the

block is applied on A13-A17. The Block Protection

algorithm is shown in Figure 14. Block protection is

initiated on the edge of W falling to V_IL. Then after

a delay of 100µs, the edge of W rising to V_IHends

the protection operations. Block protection verify is

achieved by bringing G, E, A0 and A6 to V_ILand A1

to V_IH, while W is at V_IHand A9 at V_ID. Under these

conditions, reading the data output will yield 01h if

the block defined by the inputs on A13-A17 is

protected. Any attempt to program or erase a pro-

tected block will be ignored by the device.

Table 7. Commands

Hex Code

00h

Command

Invalid/Reserved

10h

Chip Erase Confirm

Reserved

20h

30h

Block Erase Resume/Confirm

Set-up Erase

80h

Read Electronic Signature/

Block Protection Status

90h

A0h

B0h

F0h

Program

Erase Suspend

Read Array/Reset

Block Temporary Unprotection. This feature is

available on M29F002T and M29F002B only. Any

previously protected block can be temporarily un-

7/29

1...4 5 678 9 10...29

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