M29F002T, M29F002NT
M29F002B
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
5V ± 10% SUPPLYVOLTAGEfor PROGRAM,
ERASE and READ OPERATIONS
FASTACCESS TIME: 70ns
FAST PROGRAMMING TIME: 10µs typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
32
– Status Register bits
MEMORY BLOCKS
1
PLCC32 (K)
PDIP32 (P)
– Boot Block (Top or Bottom location)
– Parameterand Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
TSOP32 (N)
8 x 20mm
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
Figure 1. Logic Diagram
V
CC
– Device Code, M29F002T: B0h
– Device Code, M29F002NT: B0h
– Device Code, M29F002B: 34h
18
8
A0-A17
DQ0-DQ7
DESCRIPTION
W
The M29F002 is a non-volatile memory that may
be erased electrically at the block or chiplevel and
programmed in-system on a Byte-by-Byte basis
usingonlyasingle5VVCC supply.ForProgramand
Erase operations the necessary high voltages are
generated internally. The device can also be pro-
grammed in standardprogrammers.
M29F002T
M29F002B
M29F002NT
E
G
(*) RPNC
The array matrix organisationallows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protectedagainst pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
V
SS
AI02078C
Note: * RPNC function is not available for the M29F002NT
July 1998
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